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CY7C271A-55KMB PDF预览

CY7C271A-55KMB

更新时间: 2024-11-09 15:31:59
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 可编程只读存储器OTP只读存储器内存集成电路
页数 文件大小 规格书
11页 196K
描述
OTP ROM, 32KX8, 55ns, CMOS, CDFP28, CERPACK-28

CY7C271A-55KMB 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DFP包装说明:CERPACK-28
针数:28Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.71
风险等级:5.28最长访问时间:55 ns
其他特性:POWER SWITCHED PROMI/O 类型:COMMON
JESD-30 代码:R-GDFP-F28JESD-609代码:e0
长度:18.161 mm内存密度:262144 bit
内存集成电路类型:OTP ROM内存宽度:8
功能数量:1端子数量:28
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:32KX8
输出特性:3-STATE封装主体材料:CERAMIC, GLASS-SEALED
封装代码:DFP封装等效代码:FL28,.4
封装形状:RECTANGULAR封装形式:FLATPACK
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V编程电压:12.75 V
认证状态:Not Qualified筛选级别:MIL-STD-883
座面最大高度:2.286 mm最大待机电流:0.025 A
子类别:OTP ROMs最大压摆率:0.06 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子面层:Tin/Lead (Sn/Pb)端子形式:FLAT
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:9.144 mm
Base Number Matches:1

CY7C271A-55KMB 数据手册

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fax id: 3016  
PRELIMINARY  
CY7C271A  
32K x 8 Power Switched and  
Reprogrammable PROM  
matically powers down into a low-power stand-by mode. The  
CY7C271A is packaged in the 300-mil slim package and is  
available in a cerDIP package equipped with an erasure win-  
dow to provide for reprogrammability. When exposed to UV  
light, the PROM is erased and can be reprogrammed. The  
memory cells utilize proven EPROM floating gate technology  
and byte-wide intelligent programming algorithms.  
Features  
• CMOS for optimum speed/power  
• Windowed for reprogrammability  
• High speed  
— 25 ns (commercial)  
— 35 ns (military)  
• Low power  
The CY7C271A offers the advantages of lower power, superior  
performance, and programming yield. The EPROM cell re-  
quires only 12.5V for the super voltage, and low current re-  
quirements allow for gang programming. The EPROM cells  
allow each memory location to be tested 100% because each  
location is written into, erased, and repeatedly exercised prior  
to encapsulation. Each PROM is also tested for AC perfor-  
mance to guarantee that after customer programming, the  
product will meet DC and AC specification limits.  
— 275 mW (commercial)  
— 330 mW (military)  
• Super low standby power  
— Less than 85 mW when deselected  
• EPROM technology 100%programmable  
• Slim 300-mil package  
• Direct replacement for bipolar PROMs  
• Capable of withstanding >4001V static discharge  
Reading the 7C271A is accomplished by placing active LOW  
signals on CS and CE, and an active HIGH on CS . The contents  
1
2
of the memory location addressed by the address lines (A - A ) will  
0
14  
become available on the output lines (O - O ).  
0
7
Functional Description  
The CY7C271A is a high-performance 32,768-word by 8-bit  
CMOS PROM. When disabled (CE HIGH), the 7C271A auto-  
Logic Block Diagram  
Pin Configurations  
DIP/Flatpack  
V
1
28  
A
CC  
9
O
7
O
6
O
5
A
14  
A
10  
A
11  
A
12  
A
13  
A
14  
2
27  
26  
A
8
A
A
13  
3
A
7
A
4
12  
25  
24  
23  
22  
21  
6
256 x 1024  
PROGRAMABLE  
ARRAY  
X
A
5
5
8 x 1 OF 128  
MULTIPLEXER  
A
11  
A
10  
ADDRESS  
A
4
6
A
CS  
7
3
1
A
9
A
8
2
CS  
2
A
8
A
9
20  
19  
18  
17  
16  
1
CE  
A
0
10  
11  
12  
13  
A
7
O
7
O
6
O
4
O
3
O
O
0
A
6
1
O
5
A
5
O
2
O
4
A
4
O
3
14  
GND  
15  
A
3
C271A-2  
Y
A
2
LCC/PLCC(OpaqueOnly)  
ADDRESS  
O
O
2
A
1
4
A
0
3
2
3231 30  
1
A
A
A
NC  
CS  
CS  
CE  
12  
13  
14  
29  
A
A
A
6
5
6
7
8
1
28  
27  
26  
25  
24  
23  
22  
21  
5
POWER-DOWN  
4
A
3
A
1
2
9
O
0
A
2
1
10  
11  
12  
13  
A
0
CE  
CS  
CS  
O
O
6
NC  
O
7
1
0
2
14151617 181920  
C271A-1  
C271A-3  
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose  
CA 95134  
408-943-2600  
December 1994 – Revised October 1995  

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