Datasheet > CY7C1548KV18-400BZXC

CY7C1548KV18-400BZXC

更新时间： 2024-11-21 14:51:07

品牌	Logo	应用领域
英飞凌 - INFINEON		双倍数据速率
页数	文件大小	规格书
29页	816K
描述
DDR-II+ CIO

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数据手册

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CY7C1548KV18/CY7C1550KV18

72-Mbit DDR II+ SRAM Two-Word

Burst Architecture (2.0 Cycle Read Latency)

72-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency)

Features

Configurations

■ 72-Mbit density (4M × 18, 2M × 36)

With Read Cycle Latency of 2.0 cycles:

CY7C1548KV18 – 4M × 18

■ 450-MHz clock for high bandwidth

CY7C1550KV18 – 2M × 36

■ 2-word burst for reducing address bus frequency

■ Double data rate (DDR) interfaces (data transferred at

900 MHz) at 450 MHz

Functional Description

The CY7C1548KV18, and CY7C1550KV18 are 1.8 V

Synchronous Pipelined SRAMs equipped with DDR II+

architecture. The DDR II+ consists of an SRAM core with

advanced synchronous peripheral circuitry. Addresses for read

and write are latched on alternate rising edges of the input (K)

clock. Write data is registered on the rising edges of both K and

K. Read data is driven on the rising edges of K and K. Each

address location is associated with two 18-bit words

(CY7C1548KV18), or 36-bit words (CY7C1550KV18) that burst

sequentially into or out of the device.

■ Available in 2.0 clock cycle latency

■ Two input clocks (K and K) for precise DDR timing

❐ SRAM uses rising edges only

■ Echo clocks (CQ and CQ) simplify data capture in high-speed

systems

■ Data valid pin (QVLD) to indicate valid data on the output

■ Synchronous internally self-timed writes

Asynchronous inputs include an output impedance matching

input (ZQ). Synchronous data outputs (Q, sharing the same

physical pins as the data inputs D) are tightly matched to the two

output echo clocks CQ/CQ, eliminating the need for separately

capturing data from each individual DDR SRAM in the system

design.

■ DDR II+ operates with 2.0 cycle read latency when DOFF is

asserted HIGH

■ Operatessimilarto DDR Idevice with 1 cycle read latencywhen

DOFF is asserted LOW

[1]

■ Core V_DD= 1.8 V ± 0.1 V; I/O V_DDQ= 1.4 V to V_DD

All synchronous inputs pass through input registers controlled by

the K or K input clocks. All data outputs pass through output

registers controlled by the K or K input clocks. Writes are

conducted with on-chip synchronous self-timed write circuitry.

❐ Supports both 1.5 V and 1.8 V I/O supply

■ High-speed transceiver logic (HSTL) inputs and variable drive

HSTL output buffers

For a complete list of related documentation, click here.

■ Available in 165-ball fine pitch ball grid array (FBGA) package

(13 ×15 ×1.4 mm)

■ Offered in both Pb-free and non Pb-free packages

■ JTAG 1149.1 compatible test access port

■ Phase-Locked Loop (PLL) for accurate Data Placement

Selection Guide

Description

Maximum operating frequency

450 MHz

450

400 MHz Unit

400

590

750

MHz

Maximum operating current

× 18

× 36

650

820

Note

1. The Cypress QDR II+ devices surpass the QDR consortium specification and can support V

= 1.4 V to V

DDQ

Cypress Semiconductor Corporation

Document Number: 001-15879 Rev. *R

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised January 4, 2018

12 3 4 5 6 7...29

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与CY7C1548KV18-400BZXC相关器件

型号	品牌	获取价格	描述	数据表
CY7C1548KV18-450BZC	CYPRESS	获取价格	72-Mbit DDR II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1548KV18-450BZI	CYPRESS	获取价格	72-Mbit DDR II SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1548V18	CYPRESS	获取价格	72-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1548V18-300BZC	CYPRESS	获取价格	72-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1548V18-300BZI	CYPRESS	获取价格	72-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1548V18-300BZXC	CYPRESS	获取价格	72-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1548V18-300BZXI	CYPRESS	获取价格	72-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1548V18-333BZC	CYPRESS	获取价格	72-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1548V18-333BZI	CYPRESS	获取价格	72-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1548V18-333BZXC	CYPRESS	获取价格	72-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)

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