CY7C1518V18-300BZC

更新时间： 2024-10-30 05:19:47

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器双倍数据速率
页数	文件大小	规格书
28页	670K
描述
72-Mbit DDR-II SRAM 2-Word Burst Architecture

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数据手册
替代型号

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CY7C1518V18-300BZC 数据手册

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CY7C1516V18

CY7C1527V18

CY7C1518V18

CY7C1520V18

72-Mbit DDR-II SRAM 2-Word

Burst Architecture

Features

Functional Description

• 72-Mbit density (8M x 8, 8M x 9, 4M x 18, 2M x 36)

• 300-MHz clock for high bandwidth

The CY7C1516V18, CY7C1527V18, CY7C1518V18, and

CY7C1520V18 are 1.8V Synchronous Pipelined SRAM

equipped with DDR-II architecture. The DDR-II consists of an

SRAM core with advanced synchronous peripheral circuitry

and a 1-bit burst counter. Addresses for Read and Write are

latched on alternate rising edges of the input (K) clock.Write

data is registered on the rising edges of both K and K. Read

data is driven on the rising edges of C and C if provided, or on

the rising edge of K and K if C/C are not provided. Each

address location is associated with two 8-bit words in the case

of CY7C1516V18 and two 9-bit words in the case of

CY7C1527V18 that burst sequentially into or out of the device.

The burst counter always starts with a “0” internally in the case

of CY7C1516V18 and CY7C1527V18. On CY7C1518V18 and

CY7C1520V18, the burst counter takes in the least significant

bit of the external address and bursts two 18-bit words in the

case of CY7C1518V18 and two 36-bit words in the case of

CY7C1520V18 sequentially into or out of the device.

• 2-Word burst for reducing address bus frequency

• Double Data Rate (DDR) interfaces

(data transferred at 600 MHz) @ 300 MHz

• Two input clocks (K and K) for precise DDR timing

— SRAM uses rising edges only

• Two input clocks for output data (C and C) to minimize

clock-skew and flight-time mismatches

• Echo clocks (CQ and CQ) simplify data capture in

high-speed systems

• Synchronous internally self-timed writes

• 1.8V core power supply with HSTL inputs and outputs

• Variable drive HSTL output buffers

• Expanded HSTL output voltage (1.4V–V_DD

)

Asynchronous inputs include output impedance matching

input (ZQ). Synchronous data outputs (Q, sharing the same

physical pins as the data inputs D) are tightly matched to the

two output echo clocks CQ/CQ, eliminating the need for

separately capturing data from each individual DDR SRAM in

the system design. Output data clocks (C/C) enable maximum

system clocking and data synchronization flexibility.

• Available in 165-ball FBGA package (15 x 17 x 1.4 mm)

• Offered in both lead-free and non lead-free packages

• JTAG 1149.1 compatible test access port

• Delay Lock Loop (DLL) for accurate data placement

All synchronous inputs pass through input registers controlled

by the K or K input clocks. All data outputs pass through output

registers controlled by the C or C (or K or K in a single clock

domain) input clocks. Writes are conducted with on-chip

synchronous self-timed write circuitry.

Configurations

CY7C1516V18 – 8M x 8

CY7C1527V18 – 8M x 9

CY7C1518V18 – 4M x 18

CY7C1520V18 – 2M x 36

Selection Guide

300 MHz

300

278 MHz

250 MHz

250

200 MHz

200

167 MHz

167

Unit

MHz

Maximum Operating Frequency

Maximum Operating Current (x36)

278

860

900

800

700

650

Cypress Semiconductor Corporation

Document #: 38-05563 Rev. *D

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised June 1, 2006

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CY7C1518V18-300BZC 替代型号

型号	品牌	替代类型	描述	数据表
GS8662T18BGD-300	GSI	功能相似	165 BGA
UPD44644182AF5-E33-FQ1-A	RENESAS	功能相似	4MX18 DDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, LEAD FREE, PLASTIC, BGA-165
CY7C1518KV18-300BZXC	CYPRESS	功能相似	72-Mbit DDR-II SRAM 2-Word Burst Architecture

与CY7C1518V18-300BZC相关器件

型号	品牌	获取价格	描述	数据表
CY7C1518V18-300BZI	CYPRESS	获取价格	72-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1518V18-300BZXC	CYPRESS	获取价格	72-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1518V18-300BZXI	CYPRESS	获取价格	72-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1519KV18-167BZC	CYPRESS	获取价格	DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
CY7C1519KV18-167BZXC	CYPRESS	获取价格	DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBG
CY7C1519KV18-167BZXI	CYPRESS	获取价格	DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBG
CY7C1519KV18-200BZXI	CYPRESS	获取价格	DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBG
CY7C1519KV18-250BZI	CYPRESS	获取价格	DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
CY7C1519KV18-250BZXI	CYPRESS	获取价格	DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBG
CY7C1519KV18-300BZC	CYPRESS	获取价格	DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165

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