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CY7C1424BV18-167BZC PDF预览

CY7C1424BV18-167BZC

更新时间： 2024-11-05 05:19:31
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器双倍数据速率
页数 文件大小 规格书
28页 1159K
描述
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture

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CY7C1424BV18-167BZC 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：BGA
包装说明：15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165针数：165
Reach Compliance Code：compliantECCN代码：3A991.B.2.A
HTS代码：8542.32.00.41风险等级：5.92
最长访问时间：0.5 ns其他特性：PIPELINED ARCHITECTURE
I/O 类型：SEPARATEJESD-30 代码：R-PBGA-B165
JESD-609代码：e0长度：17 mm
内存密度：37748736 bit内存集成电路类型：DDR SRAM
内存宽度：36湿度敏感等级：3
功能数量：1端子数量：165
字数：1048576 words字数代码：1000000
工作模式：SYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：1MX36
输出特性：3-STATE封装主体材料：PLASTIC/EPOXY
封装代码：LBGA封装等效代码：BGA165,11X15,40
封装形状：RECTANGULAR封装形式：GRID ARRAY, LOW PROFILE
并行/串行：PARALLEL峰值回流温度（摄氏度）：220
电源：1.5/1.8,1.8 V认证状态：Not Qualified
座面最大高度：1.4 mm最大待机电流：0.22 A
最小待机电流：1.7 V子类别：SRAMs
最大压摆率：0.5 mA最大供电电压 (Vsup)：1.9 V
最小供电电压 (Vsup)：1.7 V标称供电电压 (Vsup)：1.8 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子面层：Tin/Lead (Sn/Pb)
端子形式：BALL端子节距：1 mm
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：15 mmBase Number Matches：1

CY7C1424BV18-167BZC 数据手册

 浏览型号CY7C1424BV18-167BZC的Datasheet PDF文件第2页浏览型号CY7C1424BV18-167BZC的Datasheet PDF文件第3页浏览型号CY7C1424BV18-167BZC的Datasheet PDF文件第4页浏览型号CY7C1424BV18-167BZC的Datasheet PDF文件第5页浏览型号CY7C1424BV18-167BZC的Datasheet PDF文件第6页浏览型号CY7C1424BV18-167BZC的Datasheet PDF文件第7页 
CY7C1422BV18  
CY7C1429BV18  
CY7C1423BV18  
CY7C1424BV18  
PRELIMINARY  
36-Mbit DDR-II SIO SRAM 2-Word Burst  
Architecture  
Features  
Functional Description  
• 36-Mbit density (4M x 8, 4M x 9, 2M x 18, 1M x 36)  
• 300-MHz clock for high bandwidth  
The CY7C1422BV18, CY7C1429BV18, CY7C1423BV18 and  
CY7C1424BV18 are 1.8V Synchronous Pipelined SRAMs  
equipped with DDR-II SIO (Double Data Rate Separate I/O)  
architecture. The DDR-II SIO consists of two separate ports to  
access the memory array. The Read port has dedicated Data  
outputs and the Write port has dedicated Data inputs to  
completely eliminate the need to “turn around’ the data bus  
required with common I/O devices. Access to each port is  
accomplished using a common address bus. Addresses for  
Read and Write are latched on alternate rising edges of the  
input (K) clock. Write data is registered on the rising edges of  
both K and K. Read data is driven on the rising edges of C and  
C if provided, or on the rising edge of K and K if C/C are not  
provided. Each address location is associated with two 8-bit  
words in the case of CY7C1422BV18, two 9-bit words in the  
case of CY7C1429BV18, two 18-bit words in the case of  
CY7C1423BV18, and two 36-bit words in the case of  
CY7C1424BV18, that burst sequentially into or out of the  
device.  
• 2-Word burst for reducing address bus frequency  
• Double Data Rate (DDR) interfaces  
(data transferred at 600 MHz) @ 300 MHz  
• Two input clocks (K and K) for precise DDR timing  
— SRAM uses rising edges only  
• Two input clocks for output data (C and C) to minimize  
clock-skew and flight-time mismatches  
• Echo clocks (CQ and CQ) simplify data capture in  
high-speed systems  
• Synchronous internally self-timed writes  
• DDR-II operates with 1.5 cycle read latency when DLL  
is enabled  
• Operates like a DDR I device with 1 cycle read latency  
in DLL off mode  
Asynchronous inputs include output impedance matching  
input (ZQ). Synchronous data outputs are tightly matched to  
the two output echo clocks CQ/CQ, eliminating the need for  
separately capturing data from each individual DDR-II SIO  
SRAM in the system design. Output data clocks (C/C) enable  
maximum system clocking and data synchronization flexibility.  
• 1.8V core power supply with HSTL inputs and outputs  
• Variable drive HSTL output buffers  
• Expanded HSTL output voltage (1.4V–VDD  
)
• Available in 165-ball FBGA package (15 x 17 x 1.4 mm)  
• Offered in both lead-free and non lead-free packages  
• JTAG 1149.1 compatible test access port  
All synchronous inputs pass through input registers controlled  
by the K/K input clocks. All data outputs pass through output  
registers controlled by the C or C (or K or K in a single clock  
domain) input clock. Writes are conducted with on-chip  
synchronous self-timed write circuitry.  
• Delay Lock Loop (DLL) for accurate data placement  
Configuration  
CY7C1422BV18–4M x 8  
CY7C1429BV18–4M x 9  
CY7C1423BV18–2M x18  
CY7C1424BV18–1M x 36  
Selection Guide  
300 MHz  
300  
278 MHz  
250 MHz  
250  
200 MHz  
200  
167 MHz  
167  
Unit  
MHz  
mA  
Maximum Operating Frequency  
Maximum Operating Current  
278  
775  
825  
700  
600  
500  
Cypress Semiconductor Corporation  
Document Number: 001-07035 Rev. *B  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised September 20, 2006  
[+] Feedback  
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