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CY7C1412V18-200BZC PDF预览

CY7C1412V18-200BZC

更新时间: 2024-12-01 05:19:27
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
23页 409K
描述
36-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture

CY7C1412V18-200BZC 数据手册

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CY7C1410V18  
CY7C1425V18  
CY7C1412V18  
CY7C1414V18  
PRELIMINARY  
36-Mbit QDR-II™ SRAM 2-Word  
Burst Architecture  
Features  
Functional Description  
• Separate Independent Read and Write data ports  
The CY7C1410V18, CY7C1425V18, CY7C1412V18, and  
CY7C1414V18 are 1.8V Synchronous Pipelined SRAMs,  
equipped with QDR™-II architecture. QDR-II architecture  
consists of two separate ports to access the memory array.  
The Read port has dedicated Data Outputs to support Read  
operations and the Write Port has dedicated Data Inputs to  
support Write operations. QDR-II architecture has separate  
data inputs and data outputs to completely eliminate the need  
to “turn-around” the data bus required with common I/O  
devices. Access to each port is accomplished through a  
common address bus. The Read address is latched on the  
rising edge of the K clock and the Write address is latched on  
the rising edge of the K clock. Accesses to the QDR-II Read  
and Write ports are completely independent of one another. In  
order to maximize data throughput, both Read and Write ports  
are equipped with Double Data Rate (DDR) interfaces. Each  
address location is associated with two 8-bit words  
(CY7C1410V18) or 9-bit words (CY7C1425V18) or 18-bit  
words (CY7C1412V18) or 36-bit words (CY7C1414V18) that  
burst sequentially into or out of the device. Since data can be  
transferred into and out of the device on every rising edge of  
both input clocks (K and K and C and C), memory bandwidth  
is maximized while simplifying system design by eliminating  
bus “turn-arounds.”  
— Supports concurrent transactions  
• 200-MHz clock for high bandwidth  
• 2-Word Burst on all accesses  
• Double Data Rate (DDR) interfaces on both Read and  
Write ports (data transferred at 400 MHz) @ 200 MHz  
• Two input clocks (K and K) for precise DDR timing  
— SRAM uses rising edges only  
• Two output clocks (C and C) accounts for clock skew  
and flight time mismatching  
• Echo clocks (CQ and CQ) simplify data capture in  
high-speed systems  
• Single multiplexed address input bus latches address  
inputs for both Read and Write ports  
• Separate Port Selects for depth expansion  
• Synchronous internally self-timed writes  
• Available in x8, x9, x18, and x36 configurations  
• Full data coherency, providing most current data  
• Core VDD = 1.8V (±0.1V); I/O VDDQ = 1.4V to VDD  
• 15 × 17 × 1.4 mm 1.0-mm pitch FBGA package, 165-ball  
(11 × 15 matrix)  
Depth expansion is accomplished with Port Selects for each  
port. Port selects allow each port to operate independently.  
• Variable drive HSTL output buffers  
All synchronous inputs pass through input registers controlled  
by the K or K input clocks. All data outputs pass through output  
registers controlled by the C or C (or K or K in a single clock  
domain) input clocks. Writes are conducted with on-chip  
synchronous self-timed write circuitry.  
• JTAG 1149.1 compatible test access port  
• Delay Lock Loop (DLL) for accurate data placement  
Configurations  
CY7C1410V18 – 4M x 8  
CY7C1425V18 – 4M x 9  
CY7C1412V18 – 2M x 18  
CY7C1414V18 – 1M x 36  
Cypress Semiconductor Corporation  
Document #: 38-05592 Rev. **  
3901 North First Street  
San Jose, CA 95134  
408-943-2600  
Revised June 07, 2004  

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