Datasheet > CY7C1363A-100AIT

CY7C1363A-100AIT

更新时间： 2024-11-17 05:07:11

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器内存集成电路
页数	文件大小	规格书
28页	738K
描述
Standard SRAM, 512KX18, 8ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100

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CY7C1363A-100AIT 技术参数

生命周期：	Obsolete	零件包装代码：	QFP
包装说明：	LQFP,	针数：	100
Reach Compliance Code：	unknown	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	风险等级：	5.82
最长访问时间：	8 ns	其他特性：	FLOW-THROUGH ARCHITECTURE
JESD-30 代码：	R-PQFP-G100	长度：	20 mm
内存密度：	9437184 bit	内存集成电路类型：	STANDARD SRAM
内存宽度：	18	功能数量：	1
端子数量：	100	字数：	524288 words
字数代码：	512000	工作模式：	SYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	512KX18	封装主体材料：	PLASTIC/EPOXY
封装代码：	LQFP	封装形状：	RECTANGULAR
封装形式：	FLATPACK, LOW PROFILE	并行/串行：	PARALLEL
认证状态：	Not Qualified	座面最大高度：	1.6 mm
最大供电电压 (Vsup)：	3.63 V	最小供电电压 (Vsup)：	3.135 V
标称供电电压 (Vsup)：	3.3 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子形式：	GULL WING	端子节距：	0.65 mm
端子位置：	QUAD	宽度：	14 mm

CY7C1363A-100AIT 数据手册

1CY7C1361A

CY7C1361A/GVT71256B36

CY7C1363A/GVT71512B18

256K x 36/512K x 18 Synchronous Burst Flowthrough SRAM

and a 2-bit counter for internal burst operation. All synchro-

Features

nous inputs are gated by registers controlled by a positive-

edge-triggered Clock Input (CLK). The synchronous inputs in-

clude all addresses, all data inputs, address-pipelining Chip

Enable (CE), depth-expansion Chip Enables (CE₂and CE₂),

Burst Control Inputs (ADSC, ADSP, and ADV), Write Enables

(BWa, BWb, BWc, BWd, and BWE), and Global Write (GW).

However, the CE₂chip enable input is only available for TA(GV-

TI)/A(CY) package version.

• Fast access times: 6.0, 6.5, 7.0, and 8.0 ns

• Fast clock speed: 150, 133, 117, and 100 MHz

• 1 ns set-up time and hold time

• Fast OE access times: 3.5 ns and 4.0 ns

• 3.3V –5% and +10% power supply

• 3.3V or 2.5V I/O supply

• 5V tolerant inputs except I/Os

Asynchronous inputs include the Output Enable (OE) and

burst mode control (MODE). The data outputs (Q), enabled by

OE, are also asynchronous.

• Clamp diodes to V_SSat all inputs and outputs

• Common data inputs and data outputs

• Byte Write Enable and Global Write control

• Multiple chip enables for depth expansion:

three chip enables for TA(GVTI)/A(CY) package version

and two chip enables for B(GVTI)/BG(CY) and

T(GVTI)/AJ(CY) package versions

• Address pipeline capability

• Address, data and control registers

• Internally self-timed Write Cycle

• Burst control pins (interleaved or linear burst se-

quence)

• Automatic power-down for portable applications

• JTAG boundary scan for B and T package version

• Low profile 119-bump, 14-mm x 22-mm PBGA (Ball Grid

Array) and 100-pin TQFP packages

Addresses and chip enables are registered with either Ad-

dress Status Processor (ADSP) or Address Status Controller

(ADSC) input pins. Subsequent burst addresses can be inter-

nally generated as controlled by the Burst Advance pin (ADV).

Address, data inputs, and write controls are registered on-chip

to initiate self-timed WRITE cycle. WRITE cycles can be one

to four bytes wide as controlled by the write control inputs.

Individual byte write allows individual byte to be written. BWa

controls DQa. BWb controls DQb. BWc controls DQc. BWd

controls DQd. BWa, BWb, BWc, and BWd can be active only

with BWE being LOW. GW being LOW causes all bytes to be

written. The x18 version only has 18 data inputs/outputs (DQa

and DQb) along with BWa and BWb (no BWc, BWd, DQc, and

DQd).

For the B(GVTI)/BG(CY) and T(GVTI)/AJ(CY) package ver-

sions, four pins are used to implement JTAG test capabilities:

Test Mode Select (TMS), Test Data-In (TDI), Test Clock (TCK),

and Test Data-Out (TDO). The JTAG circuitry is used to serially

shift data to and from the device. JTAG inputs use

LVTTL/LVCMOS levels to shift data during this testing mode of

operation. The TA package version does not offer the JTAG

capability.

Functional Description

The Cypress Synchronous Burst SRAM family employs high-

speed, low-power CMOS designs using advanced triple-layer

polysilicon, double-layer metal technology. Each memory cell

consists of four transistors and two high-valued resistors.

The GVT71256B36/CY7C1361A and GVT71512B18/

CY7C1363A SRAMs integrate 262,144x36 and 524,288x18

SRAM cells with advanced synchronous peripheral circuitry

The GVT71256B36 and GVT71512B18 operate from a +3.3V

power supply. All inputs and outputs are LVTTL compatible.

Selection Guide

7C1361A-150

7C1361A-133

7C1363A-133

71256B36-6.5

71512B18-6.5

7C1361A-117

7C1363A-117

71256B36-7

71512B18-7

7C1361A-100

7C1363A-100

71256B36-8

71512B18-8

7C1363A-150

71256B36-6

71512B18-6

Maximum Access Time (ns)

6.0

400

6.5

360

7.0

320

8.0

270

Maximum Operating Current (mA)

Maximum CMOS Standby Current (mA)

Cypress Semiconductor Corporation

•

3901 North First Street

•

San Jose

•

CA 95134

•

408-943-2600

June 11, 2001

12 3 4 5 6 7...28

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与CY7C1363A-100AIT相关器件

型号	品牌	获取价格	描述	数据表
CY7C1363A-100AJC	ROCHESTER	获取价格	512KX18 STANDARD SRAM, 9ns, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
CY7C1363A-100AJC	CYPRESS	获取价格	256K x 36/512K x 18 Synchronous Flow-Thru Burst SRAM
CY7C1363A-100AJCT	CYPRESS	获取价格	暂无描述
CY7C1363A-100AJI	CYPRESS	获取价格	256K x 36/512K x 18 Synchronous Flow-Thru Burst SRAM
CY7C1363A-100BGC	CYPRESS	获取价格	256K x 36/512K x 18 Synchronous Flow-Thru Burst SRAM
CY7C1363A-100BGC	ROCHESTER	获取价格	512KX18 STANDARD SRAM, 9ns, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119
CY7C1363A-100BGCT	CYPRESS	获取价格	Standard SRAM, 512KX18, 8ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119
CY7C1363A-100BGI	CYPRESS	获取价格	256K x 36/512K x 18 Synchronous Flow-Thru Burst SRAM
CY7C1363A-117AC	CYPRESS	获取价格	256K x 36/512K x 18 Synchronous Flow-Thru Burst SRAM
CY7C1363A-117ACT	CYPRESS	获取价格	Standard SRAM, 512KX18, 7ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100

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