CY7C1361A
CY7C1363A
256K x 36/512K x 18 Synchronous
Flow-Thru Burst SRAM
synchronous peripheral circuitry and a two-bit counter for
internal burst operation. All synchronous inputs are gated by
registers controlled by a positive-edge-triggered Clock Input
(CLK). The synchronous inputs include all addresses, all data
inputs, address-pipelining Chip Enable (CE), depth-expansion
Chip Enables (CE2 and CE2), burst control inputs (ADSC,
ADSP, and ADV), Write Enables (BWa, BWb, BWc, BWd, and
BWE), and global Write (GW). However, the CE2 chip enable
input is only available for the TA package version.
Features
• Fast access times: 6.0, 6.5, 7.0, and 8.0 ns
• Fast clock speed: 150, 133, 117, and 100 MHz
• Fast OE access times: 3.5 ns and 4.0 ns
• Optimal for depth expansion (one cycle chip deselect
to eliminate bus contention)
• 3.3V –5% and +10% power supply
• 3.3V or 2.5V I/O supply
• 5V tolerant inputs except I/Os
Asynchronous inputs include the Output Enable (OE) and
burst mode control (MODE). The data outputs (Q), enabled by
OE, are also asynchronous.
• Clamp diodes to V at all inputs and outputs
SS
• Common data inputs and data outputs
• Byte Write Enable and Global Write control
• Multiple chip enables for depth expansion: A package
version and two chip enables for BGA and AJ package
versions
Addresses and chip enables are registered with either
Address Status Processor (ADSP) or Address Status
Controller (ADSC) input pins. Subsequent burst addresses
can be internally generated as controlled by the Burst Advance
Pin (ADV).
• Address pipeline capability
• Address, data, and control registers
• Internally self-timed Write cycle
• Burst control pins (interleaved or linear burst
sequence)
• Automatic power-down feature available using ZZ
mode or CE deselect.
• JTAG boundary scan for BG and AJ package version
• Low-profile 119-bump 14-mm × 22-mm PBGA (Ball Grid
Array) and 100-pin TQFP packages
Address, data inputs, and Write controls are registered on-chip
to initiate self-timed Write cycle. Write cycles can be one to
four bytes wide as controlled by the Write control inputs.
Individual byte Write allows individual byte to be written. BWa
controls DQa. BWb controls DQb. BWc controls DQc. BWd
controls DQd. BWa, BWb, BWc, and BWd can be active only
with BWE being LOW. GW being LOW causes all bytes to be
written. The x18 version only has 18 data inputs/outputs (DQa
and DQb) along with BWa and BWb (no BWc, BWd, DQc, and
DQd).
For the TQFP AJ and the BGA package versions, four pins are
used to implement JTAG test capabilities: Test Mode Select
(TMS), Test Data-In (TDI), Test Clock (TCK), and Test
Data-Out (TDO). The JTAG circuitry is used to serially shift
data to and from the device. JTAG inputs use LVTTL/LVCMOS
levels to shift data during this testing mode of operation. The
TA package version does not offer the JTAG capability.
Functional Description
The Cypress Synchronous Burst SRAM family employs
high-speed, low-power CMOS designs using advanced
triple-layer polysilicon, double-layer metal technology. Each
memory cell consists of four transistors and two high-valued
resistors.
The CY7C1361A and CY7C1363A operate from a +3.3V
power supply. All inputs and outputs are LVTTL-compatible.
The CY7C1361A and CY7C1363A SRAMs integrate 262,144
× 36 and 524,288 × 18 SRAM cells with advanced
Selection Guide
7C1361A-150
7C1363A-150
7C1361A-133
7C1363A-133
7C1361A-117
7C1363A-117
7C1361A-100
7C1363A-100
Unit
ns
Maximum Access Time
6.0
480
10
6.5
360
10
7.0
320
10
8.0
270
10
Maximum Operating Current
Maximum CMOS Standby Current
mA
mA
Cypress Semiconductor Corporation
•
3901 North First Street
•
San Jose
•
CA 95134
•
408-943-2600
Document #: 38-05259 Rev. *B
Revised September 4, 2002