Datasheet > 存储 > SRAM> CY7C1347G-133AXI

CY7C1347G-133AXI

更新时间： 2024-11-25 03:01:03

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器
页数	文件大小	规格书
21页	1019K
描述
4-Mbit (128K x 36) Pipelined Sync SRAM

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CY7C1347G-133AXI 数据手册

CY7C1347G

4-Mbit (128K x 36) Pipelined Sync SRAM

Features

Functional Description^[1]

The CY7C1347G is a 3.3V, 128K x 36 synchronous-pipelined

• Fully registered inputs and outputs for pipelined operation

• 128K x 36 common IO architecture

SRAM designed to support zero-wait-state secondary cache

with minimal glue logic. CY7C1347G IO pins can operate at

either the 2.5V or the 3.3V level; the IO pins are 3.3V tolerant

when V_DDQ= 2.5V. All synchronous inputs pass through input

registers controlled by the rising edge of the clock. All data

outputs pass through output registers controlled by the rising

edge of the clock. Maximum access delay from the clock rise

is 2.6 ns (250 MHz device). CY7C1347G supports either the

interleaved burst sequence used by the Intel Pentium

processor or a linear burst sequence used by processors such

as the PowerPC^®. The burst sequence is selected through the

MODE pin. Accesses can be initiated by asserting either the

Address Strobe from Processor (ADSP) or the Address Strobe

from Controller (ADSC) at clock rise. Address advancement

through the burst sequence is controlled by the ADV input. A

2-bit on-chip wraparound burst counter captures the first

address in a burst sequence and automatically increments the

address for the rest of the burst access.

• 3.3V core power supply (V_DD

)

• 2.5V/3.3V I/O power supply (V_DDQ

)

• Fast clock-to-output times

— 2.6 ns (for 250-MHz device)

• User-selectable burst counter supporting Intel^®Pentium^®

interleaved or linear burst sequences

• Separate processor and controller address strobes

• Synchronous self-timed writes

• Asynchronous output enable

• Offered in lead-free 100-Pin TQFP, lead-free and non-

lead-free 119-Ball BGA package and 165-Ball FBGA

package

• “ZZ” sleep mode option and stop clock option

• Available in industrial and commercial temperature ranges

Byte write operations are qualified with the four Byte Write

Select (BW_[A:D]) inputs. A Global Write Enable (GW) overrides

all byte write inputs and writes data to all four bytes. All writes

are conducted with on-chip synchronous self-timed write

circuitry.

Three synchronous Chip Selects (CE₁, CE₂, CE₃) and an

asynchronous Output Enable (OE) provide for easy bank

selection and output tri-state control. In order to provide proper

data during depth expansion, OE is masked during the first

clock of a read cycle when emerging from a deselected state.

Selection Guide

250 MHz

200 MHz

2.8

166 MHz

3.5

133 MHz

4.0

Unit

Maximum Access Time

2.6

325

Maximum Operating Current

Maximum CMOS Standby Current

265

240

225

Note

1. For best practice recommendations, refer to the Cypress application note AN1064, SRAM System Guidelines.

Cypress Semiconductor Corporation

Document #: 38-05516 Rev. *E

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised May 22, 2007

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与CY7C1347G-133AXI相关器件

型号	品牌	获取价格	描述	数据表
CY7C1347G-133BGC	CYPRESS	获取价格	4-Mbit (128K x 36) Pipelined Sync SRAM
CY7C1347G-133BGI	CYPRESS	获取价格	4-Mbit (128K x 36) Pipelined Sync SRAM
CY7C1347G-133BGXC	CYPRESS	获取价格	4-Mbit (128K x 36) Pipelined Sync SRAM
CY7C1347G-133BGXI	CYPRESS	获取价格	4-Mbit (128K x 36) Pipelined Sync SRAM
CY7C1347G-133BZC	CYPRESS	获取价格	4-Mbit (128K x 36) Pipelined Sync SRAM
CY7C1347G-133BZI	CYPRESS	获取价格	4-Mbit (128K x 36) Pipelined Sync SRAM
CY7C1347G-133BZXC	CYPRESS	获取价格	4-Mbit (128K x 36) Pipelined Sync SRAM
CY7C1347G-133BZXI	CYPRESS	获取价格	4-Mbit (128K x 36) Pipelined Sync SRAM
CY7C1347G-166AXC	CYPRESS	获取价格	4-Mbit (128K x 36) Pipelined Sync SRAM
CY7C1347G-166AXI	CYPRESS	获取价格	4-Mbit (128K x 36) Pipelined Sync SRAM

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