5秒后页面跳转
捷配首页

Datasheet > 暂无类别数据> CY62157ELL-55BVXE
CY62157ELL-55BVXE PDF预览

CY62157ELL-55BVXE

更新时间： 2024-11-24 04:53:27
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 内存集成电路静态存储器
页数 文件大小 规格书
12页 609K
描述
8-Mbit (512K x 16) Static RAM

阅读下载

中文翻译

获取价格

CY62157ELL-55BVXE 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：BGA
包装说明：VFBGA, TSOP44,.46,32针数：48
Reach Compliance Code：compliantECCN代码：3A991.B.2.A
HTS代码：8542.32.00.41Factory Lead Time：1 week
风险等级：5.45最长访问时间：55 ns
I/O 类型：COMMONJESD-30 代码：R-PBGA-B48
JESD-609代码：e1长度：8 mm
内存密度：8388608 bit内存集成电路类型：STANDARD SRAM
内存宽度：16湿度敏感等级：3
功能数量：1端子数量：48
字数：524288 words字数代码：512000
工作模式：ASYNCHRONOUS最高工作温度：125 °C
最低工作温度：-40 °C组织：512KX16
输出特性：3-STATE封装主体材料：PLASTIC/EPOXY
封装代码：VFBGA封装等效代码：TSOP44,.46,32
封装形状：RECTANGULAR封装形式：GRID ARRAY, VERY THIN PROFILE, FINE PITCH
并行/串行：PARALLEL峰值回流温度（摄氏度）：260
电源：5 V认证状态：Not Qualified
筛选级别：AEC-Q100座面最大高度：1 mm
最大待机电流：0.00003 A最小待机电流：2 V
子类别：SRAMs最大压摆率：0.035 mA
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：4.5 V
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：CMOS温度等级：AUTOMOTIVE
端子面层：Tin/Silver/Copper (Sn/Ag/Cu)端子形式：BALL
端子节距：0.75 mm端子位置：BOTTOM
处于峰值回流温度下的最长时间：30宽度：6 mm
Base Number Matches：1

CY62157ELL-55BVXE 数据手册

 浏览型号CY62157ELL-55BVXE的Datasheet PDF文件第2页浏览型号CY62157ELL-55BVXE的Datasheet PDF文件第3页浏览型号CY62157ELL-55BVXE的Datasheet PDF文件第4页浏览型号CY62157ELL-55BVXE的Datasheet PDF文件第5页浏览型号CY62157ELL-55BVXE的Datasheet PDF文件第6页浏览型号CY62157ELL-55BVXE的Datasheet PDF文件第7页 
CY62157E MoBL®  
8-Mbit (512K x 16) Static RAM  
also has an automatic power down feature that significantly  
reduces power consumption when addresses are not toggling.  
Place the device into standby mode when deselected (CE1  
HIGH or CE2 LOW or both BHE and BLE are HIGH). The input  
or output pins (IO0 through IO15) are placed in a high  
impedance state when:  
Features  
• Very high speed: 45 ns  
— Industrial: –40°C to +85°C  
— Automotive-E: –40°C to +125°C  
• Wide voltage range: 4.5V–5.5V  
• Ultra low standby power  
• Deselected (CE1HIGH or CE2 LOW)  
• Outputs are disabled (OE HIGH)  
— Typical Standby current: 2 µA  
— Maximum Standby current: 8 µA (Industrial)  
• Ultra low active power  
• Both Byte High Enable and Byte Low Enable are disabled  
(BHE, BLE HIGH)  
• Write operation is active (CE1 LOW, CE2 HIGH and WE  
LOW)  
— Typical active current: 1.8 mA @ f = 1 MHz  
• Ultra low standby power  
To write to the device, take Chip Enable (CE1 LOW and CE2  
HIGH) and Write Enable (WE) inputs LOW. If Byte Low Enable  
(BLE) is LOW, then data from IO pins (IO0 through IO7), is  
written into the location specified on the address pins (A0  
through A18). If Byte High Enable (BHE) is LOW, then data  
from IO pins (IO8 through IO15) is written into the location  
specified on the address pins (A0 through A18).  
• Easy memory expansion with CE1, CE2 and OE features  
• Automatic power down when deselected  
• CMOS for optimum speed and power  
• Available in Pb-free 44-pin TSOP II and 48-ball VFBGA  
package  
To read from the device, take Chip Enable (CE1 LOW and CE2  
HIGH) and Output Enable (OE) LOW while forcing the Write  
Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then  
data from the memory location specified by the address pins  
appear on IO0 to IO7. If Byte High Enable (BHE) is LOW, then  
data from memory appears on IO8 to IO15. See the “Truth  
Table” on page 9 for a complete description of read and write  
modes.  
Functional Description[1]  
The CY62157E is a high performance CMOS static RAM  
organized as 512K words by 16 bits. This device features  
advanced circuit design to provide ultra low active current.  
This is ideal for providing More Battery Life™ (MoBL®) in  
portable applications such as cellular telephones. The device  
Logic Block Diagram  
DATA IN DRIVERS  
A
10  
A
A
9
8
7
A
A
A
A
A
6
5
4
3
512K x 16  
RAM Array  
IO –IO  
0
7
IO –IO  
8
15  
A
A
A
2
1
0
COLUMN DECODER  
CE  
CE  
2
1
BHE  
WE  
PowerDown  
Circuit  
CE  
CE  
2
1
BHE  
BLE  
OE  
BLE  
Notes  
1. For best practice recommendations, please refer to the Cypress application note AN1064, SRAM System Guidelines.  
Cypress Semiconductor Corporation  
Document #: 38-05695 Rev. *E  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised April 27, 2007  
1234567...12

中文翻译

下载PDF

与CY62157ELL-55BVXE相关器件

型号 品牌 获取价格 描述 数据表
CY62157ELL-55BVXET CYPRESS

获取价格

 		暂无描述
CY62157ELL-55BVXET INFINEON

获取价格

 		Asynchronous SRAM
CY62157ELL-55ZSXE CYPRESS

获取价格

 		8-Mbit (512K x 16) Static RAM
CY62157ELL-55ZSXE INFINEON

获取价格

 		Asynchronous SRAM
CY62157ELL-55ZSXET INFINEON

获取价格

 		Asynchronous SRAM
CY62157ESL CYPRESS

获取价格

 		8-Mbit (512K x 16) Static RAM
CY62157ESL_09 CYPRESS

获取价格

 		8-Mbit (512K x 16) Static RAM
CY62157ESL_11 CYPRESS

获取价格

 		8-Mbit (512K x 16) Static RAM Automatic power down when deselected
CY62157ESL_13 CYPRESS

获取价格

 		8-Mbit (512 K x 16) Static RAM
CY62157ESL-45ZSXI CYPRESS

获取价格

 		8-Mbit (512K x 16) Static RAM

与CY62157ELL-55BVXE相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证