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CXE-1089Z

更新时间： 2024-02-28 20:05:50
品牌 Logo 应用领域
威讯 - RFMD /
页数 文件大小 规格书
10页 398K
描述
50MHz to 1200MHz 75Ω pHEMT MMIC LNA

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CXE-1089Z 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：SOT-89, 3 PINReach Compliance Code：compliant
风险等级：5.11其他特性：LOW NOISE
特性阻抗：75 Ω构造：COMPONENT
增益：12.8 dB最大输入功率 (CW)：23 dBm
安装特点：SURFACE MOUNT功能数量：1
端子数量：3最大工作频率：1200 MHz
最小工作频率：50 MHz最高工作温度：85 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装等效代码：TO-243电源：5 V
射频/微波设备类型：WIDE BAND LOW POWER子类别：RF/Microwave Amplifiers
表面贴装：YES技术：GAAS
最大电压驻波比：10Base Number Matches：1

CXE-1089Z 数据手册

 浏览型号CXE-1089Z的Datasheet PDF文件第1页浏览型号CXE-1089Z的Datasheet PDF文件第3页浏览型号CXE-1089Z的Datasheet PDF文件第4页浏览型号CXE-1089Z的Datasheet PDF文件第5页浏览型号CXE-1089Z的Datasheet PDF文件第6页浏览型号CXE-1089Z的Datasheet PDF文件第7页 
Preliminary  
CXE-1089Z  
Absolute Maximum Ratings  
Parameter  
Caution! ESD sensitive device.  
Rating  
125  
Unit  
mA  
V
Exceeding any one or a combination of the Absolute Maximum Rating conditions may  
cause permanent damage to the device. Extended application of Absolute Maximum  
Rating conditions to the device may reduce device reliability. Specified typical perfor-  
mance or functional operation of the device under Absolute Maximum Rating condi-  
tions is not implied.  
Device Current (I )  
D
Device Voltage (V )  
5.5  
D
Power Dissipation  
690  
23  
mW  
dBm  
°C  
RoHS status based on EUDirective2002/95/EC (at time of this document revision).  
RF Input Power* (See Note)  
The information in this publication is believed to be accurate and reliable. However, no  
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any  
infringement of patents, or other rights of third parties, resulting from its use. No  
license is granted by implication or otherwise under any patent or patent rights of  
RFMD. RFMD reserves the right to change component circuitry, recommended appli-  
cation circuitry and specifications at any time without prior notice.  
Junction Temperature (T )  
+150  
J
Operating Temperature Range (T )  
-40 to +85  
°C  
°C  
L
Storage Temperature Range  
-65 to +150  
Class 1A  
ESD Rating - Human Body Model  
(HBM)  
Moisture Sensitivity Level  
MSL 1  
*Note: Load condition, 10:1 VSWR  
Operation of this device beyond any one of these limits may cause permanent dam-  
age. For reliable continuous operation, the device voltage and current must not  
exceed the maximum operating values specified in the table on page one.  
Bias conditions should also satisfy the following expression:  
I V <(T -T )/R , j-l  
D
D
J
L
TH  
T =T  
L
LEAD  
Frequency (MHz)  
Parameters  
Units  
dB  
dBm  
dBm  
dBm  
dB  
dB  
dB  
dB  
50  
13.5  
16.6  
37.5  
63.5  
-17.5  
-17.5  
-17.5  
3.5  
250  
13.2  
17.2  
38.5  
64.5  
-27.5  
-17.5  
-16.5  
2.5  
550  
13.1  
18.6  
38.5  
62.5  
-33.5  
-17.5  
-16.5  
2.5  
750  
13.0  
18.9  
37.5  
60.5  
-38.5  
-17.5  
-16.5  
2.5  
850  
12.8  
19.1  
37.5  
55.5  
-34.5  
-17.5  
-15.5  
2.5  
1050  
12.8  
19.5  
37.5  
54.5  
-25.5  
-17.5  
-15.5  
2.5  
Small Signal Gain  
Output Power at 1dB Compression  
Output Third Order Intercept Point  
Output Second Order Intercept Point  
Input Return Loss  
Reverse Isolation  
Output Return Loss  
Noise Figure  
Test Conditions: V =5V I =110mA Typ.  
OIP , OIP Tone Spacing=1MHz, P  
per tone=8dBm  
D
D
3
2
OUT  
T =25°C Z =Z =75Ω  
Tested with App Circuit  
L
S
L
Current versus Voltage (RBIAS=Open)  
140.0  
120.0  
100.0  
80.0  
60.0  
40.0  
20.0  
0.0  
-40°C  
+25°C  
+85°C  
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
Device Voltage (V)  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
2 of 10  
EDS-105785 Rev D  
1234567...10

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