Datasheet > CXE2022TR7

CXE2022TR7

更新时间： 2024-02-05 18:06:10

品牌	Logo	应用领域
威讯 - RFMD		放大器射频微波
页数	文件大小	规格书
6页	395K
描述
50MHz to 1000MHz MMIC 75A LOW NOISE AMPLIFIER

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技术参数
数据手册

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CXE2022TR7 技术参数

生命周期：	Active	包装说明：	DFN-8
Reach Compliance Code：	compliant	风险等级：	5.67
特性阻抗：	75 Ω	构造：	COMPONENT
增益：	16.5 dB	最大工作频率：	1000 MHz
最小工作频率：	50 MHz	最高工作温度：	85 °C
最低工作温度：	-40 °C	射频/微波设备类型：	WIDE BAND LOW POWER
Base Number Matches：	1

CXE2022TR7 数据手册

CXE-2022Z

50MHz to

1000MHz

MMIC 75

Low Noise

Amplifier

CXE-2022Z

LOW NOISE AMPLIFIER

50MHz to 1000MHz MMIC 75

Package: 2x2 DFN

Product Description

Features

RFMD’s CXE-2022Z is a 75 high performance low noise pHEMT MMIC amplifier utilizing a self

bias network. The CXE-2022Z is designed to run over a wide 2.7V to 3.3V single supply voltage

and does not require a bias resistor as compared to typical Darlington amplifiers.



Low Noise Figure: 1.2dB



Flat Gain Response: 17.5dB

± 0.15dB

The CXE-2022Z was developed for low noise, portable, linear gain block consumer applications

which require small size, low current, and a few external components. The part is internally

matched to 75 and designed to operate over the 50MHz to 1000MHz bandwidth.



High Linearity IIP3: 0dBm

Single Supply: 2.7V to 3.3V

Low Current: 20mA

Optimum Technology

Matching® Applied

Applications

CXE-2022Z Gain

GaAs HBT



DVB/T Recievers/Antennas

DMB-T Receivers/Antennas

GaAs MESFET

InGaP HBT

PCTV and Other Portable

Devices

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT



Si CMOS

Si BJT

GaN HEMT

470

520

570

620

670

720

770

820

870

InP HBT

RF MEMS

LDMOS

Freq (MHz)

Specification

Parameter

Unit

Condition

Min.

16.5

Typ.

17.5

+/-.15

1.3

-13.5

-10

1.2

Max.

Small Signal Gain

Gain Flatness

Output Power at 1dB Compression

Input Third Order Intercept Point

Input Second Order Intercept Point

Input Return Loss

Output Return Loss

Noise Figure

Device Operating Voltage

Device Operating Current

dBm

500MHz

470MHz to 860MHz

500MHz

50MHz to 860MHz

500MHz

1.5

3.6

2.7

Test Conditions: V =3.3V, I =20mA Typ, IIP IIP Tone Spacing= 1MHz, P

per tone=-10dBm, T =25°C, Z =Z =75, Tested with App Circuit

L S L

OUT

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS101122

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