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CXE2022TR7 PDF预览

CXE2022TR7

更新时间: 2024-01-05 13:48:53
品牌 Logo 应用领域
威讯 - RFMD 放大器射频微波
页数 文件大小 规格书
6页 395K
描述
50MHz to 1000MHz MMIC 75A LOW NOISE AMPLIFIER

CXE2022TR7 技术参数

生命周期:Active包装说明:DFN-8
Reach Compliance Code:compliant风险等级:5.67
特性阻抗:75 Ω构造:COMPONENT
增益:16.5 dB最大工作频率:1000 MHz
最小工作频率:50 MHz最高工作温度:85 °C
最低工作温度:-40 °C射频/微波设备类型:WIDE BAND LOW POWER
Base Number Matches:1

CXE2022TR7 数据手册

 浏览型号CXE2022TR7的Datasheet PDF文件第2页浏览型号CXE2022TR7的Datasheet PDF文件第3页浏览型号CXE2022TR7的Datasheet PDF文件第4页浏览型号CXE2022TR7的Datasheet PDF文件第5页浏览型号CXE2022TR7的Datasheet PDF文件第6页 
CXE-2022Z  
50MHz to  
1000MHz  
MMIC 75  
Low Noise  
Amplifier  
CXE-2022Z  
LOW NOISE AMPLIFIER  
50MHz to 1000MHz MMIC 75  
Package: 2x2 DFN  
Product Description  
Features  
RFMD’s CXE-2022Z is a 75high performance low noise pHEMT MMIC amplifier utilizing a self  
bias network. The CXE-2022Z is designed to run over a wide 2.7V to 3.3V single supply voltage  
and does not require a bias resistor as compared to typical Darlington amplifiers.  
Low Noise Figure: 1.2dB  
Flat Gain Response: 17.5dB  
± 0.15dB  
The CXE-2022Z was developed for low noise, portable, linear gain block consumer applications  
which require small size, low current, and a few external components. The part is internally  
matched to 75and designed to operate over the 50MHz to 1000MHz bandwidth.  
High Linearity IIP3: 0dBm  
Single Supply: 2.7V to 3.3V  
Low Current: 20mA  
Optimum Technology  
Matching® Applied  
Applications  
CXE-2022Z Gain  
GaAs HBT  
DVB/T Recievers/Antennas  
DMB-T Receivers/Antennas  
20  
GaAs MESFET  
19  
InGaP HBT  
PCTV and Other Portable  
Devices  
SiGe BiCMOS  
18  
Si BiCMOS  
17  
SiGe HBT  
GaAs pHEMT  
16  
Si CMOS  
15  
Si BJT  
GaN HEMT  
14  
470  
520  
570  
620  
670  
720  
770  
820  
870  
InP HBT  
RF MEMS  
LDMOS  
Freq (MHz)  
Specification  
Parameter  
Unit  
Condition  
Min.  
16.5  
Typ.  
17.5  
+/-.15  
1.3  
0
10  
-13.5  
-10  
1.2  
Max.  
Small Signal Gain  
Gain Flatness  
Output Power at 1dB Compression  
Input Third Order Intercept Point  
Input Second Order Intercept Point  
Input Return Loss  
Output Return Loss  
Noise Figure  
Device Operating Voltage  
Device Operating Current  
dB  
dB  
dBm  
dBm  
dBm  
dB  
dB  
dB  
V
mA  
500MHz  
470MHz to 860MHz  
500MHz  
500MHz  
500MHz  
50MHz to 860MHz  
50MHz to 860MHz  
500MHz  
1.5  
3.6  
2.7  
17  
20  
Test Conditions: V =3.3V, I =20mA Typ, IIP IIP Tone Spacing= 1MHz, P  
per tone=-10dBm, T =25°C, Z =Z =75, Tested with App Circuit  
L S L  
P
D
3,  
2
OUT  
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-  
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
DS101122  
1 of 6  

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