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CXE-2089ZTR7 PDF预览

CXE-2089ZTR7

更新时间: 2024-02-24 12:43:14
品牌 Logo 应用领域
威讯 - RFMD 放大器射频微波
页数 文件大小 规格书
10页 646K
描述
LINEAR GENERAL PURPOSE AMPLIFIER

CXE-2089ZTR7 技术参数

是否Rohs认证: 符合生命周期:End Of Life
包装说明:TO-243Reach Compliance Code:compliant
风险等级:5.09特性阻抗:50 Ω
构造:COMPONENT增益:20 dB
最大输入功率 (CW):10 dBm安装特点:SURFACE MOUNT
功能数量:1端子数量:3
最大工作频率:1000 MHz最小工作频率:50 MHz
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装等效代码:TO-243
电源:7 V射频/微波设备类型:WIDE BAND MEDIUM POWER
子类别:RF/Microwave Amplifiers表面贴装:YES
技术:GAASBase Number Matches:1

CXE-2089ZTR7 数据手册

 浏览型号CXE-2089ZTR7的Datasheet PDF文件第2页浏览型号CXE-2089ZTR7的Datasheet PDF文件第3页浏览型号CXE-2089ZTR7的Datasheet PDF文件第4页浏览型号CXE-2089ZTR7的Datasheet PDF文件第5页浏览型号CXE-2089ZTR7的Datasheet PDF文件第6页浏览型号CXE-2089ZTR7的Datasheet PDF文件第7页 
CXE-2089Z  
LINEAR GENERAL PURPOSE AMPLIFIER  
Package: SOT-89  
Features  
50MHz to 1000MHz  
Operation  
Internally Matched Input and  
Output  
20dB Small Signal Gain  
1.5dB Noise Figure  
+24dBm Output Power  
Single 5V to 9V Positive  
Power Supply  
Applications  
CATV Distribution Amplifiers  
Cable Modems  
Functional Block Diagram  
Product Description  
Broadband Gain Blocks  
Laser Diode Driver  
The CXE-2089Z is a general purpose, low-cost, high-linearity RF amplifier  
IC. The device is manufactured on a Gallium Arsenide process and is fea-  
tured in a small SOT-89 package. It has been designed for use as an easily  
cascadable 75gain block with a noise figure of less than 2dB. Gain flat-  
ness better than 0.5dB from 50MHz to 1000MHz, and high linearity make  
this part ideal for cable TV applications. Other applications include IF and  
RF amplification in wireless voice and data communication products oper-  
ating in the 50MHz to 1000MHz frequency range. The device is self-con-  
tained with 75input and output impedances providing less than 2:1  
VSWR matching. For higher input and output return losses, see the evalu-  
ation schematic.  
Return Channel Amplifier  
Base Stations  
Optimum Technology Matching® Applied  
GaAs HBT  
GaAs MESFET  
InGaP HBT  
SiGe BiCMOS  
Si BiCMOS  
SiGe HBT  
GaAs pHEMT  
Si CMOS  
Si BJT  
GaN HEMT  
BiFET HBT  
LDMOS  
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-  
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.  
DS110930  
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