CTQ
Vishay Electro-Films
www.vishay.com
Thin Film, Center-Tapped Resistor Divider Network
FEATURES
• Wire bondable
• Center tap feature
• Chip size: 0.030" x 0.030"
• Case: 0303
• Resistance range total: 10 to 1 M
• Moisture resistant
• Quartz substrate
Product may not be to scale
• Resistor material: Tantalum nitride, self-passivating
The CTQ series resistor chips offer a wide resistance range
with lower shunt capacitance than can be offered with the
silicon based resistors but only at a lower power level.
• Low shunt capacitance < 0.1 pF
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
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The CTQ offers the designer flexibility in use as either a
single value resistor or as two resistor with a center tap
feature. The CTQs six bonding pads allows the user
increased layout flexibility.
V
R
R
A
B
The CTQs are manufactured using Vishay Electro-Films (EFI)
sophisticated thin film equipment and manufacturing
technology. The CTQs are 100 % electrically tested and
visually inspected to MIL-STD-883, method 2032 class H
or K.
V
V
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APPLICATIONS
The CTQ center-tapped resistor chips are used mainly in
feedback circuits of amplifiers where ratio matching, low
shunt capacitance and tracking between two resistors is
critical.
For low values, the resistance of the six bonding pad
configuration can vary, depending on the method of
measurement used. Vishay EFI measures low-value
resistors by the four-wire kelvin technique.
TEMPERATURE COEFFICIENT OF RESISTANCE, VALUES, AND TOLERANCES
PARAMETER
VALUE
UNIT
%
Total Resistance Range
Standard Tolerances
TCR
10 to 1M
0.1, 0.5
25, 50, 100
ppm/°C
Tightest Standard Tolerance Available
0.ꢁ %
0.1 %
2ꢁ ppmꢀ/C
ꢁ0 ppmꢀ/C
100 ppmꢀ/C
10 Ω
2ꢁ Ω
100 Ω
360 kΩ 620 kΩ 1 MΩ
STANDARD ELECTRICAL SPECIFICATIONS
PARAMETER
TCR Tracking Between Halves (RA/RB) (1)
Center Tap Ratio, RA/RB: Tolerance
VALUE
UNIT
ppm/°C
%
2
1
1 standard
Noise, MIL-STD-202, Method 308, 100 to 250 k,
< 100 or > 251 k
- 35 typ.
- 20 typ.
dB
Moisture Resistance, MIL-STD-202, Method 106
Stability, 1000 h, + 125 °C, 30 mW
Operating Temperature Range
Thermal Shock, MIL-STD-202, Method 107, Test Condition F
High Temperature Exposure, + 150 °C, 100 h
Dielectric Voltage Breakdown
0.5 max. R/R
0.25 max. R/R
- 55 to + 125
0.1 max. R/R
0.2 max. R/R
400
%
%
°C
%
%
V
Insulation Resistance
1012 min.
Operating Voltage
200 max.
V
DC Power Rating at + 70 °C (derated to zero at + 175 °C)
5 x Rated Power Short-Time Overload, + 25 °C, 5 s
0.06 max.
0.25 max. R/R
W
%
Note
(1)
5 ppm/°C for R < 100. 20 ppm/°C for R < 20
Revision: 20-Mar-13
Document Number: 61030
1
For technical questions, contact: efi@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000