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CT90AM-18 PDF预览

CT90AM-18

更新时间: 2024-10-28 09:35:47
品牌 Logo 应用领域
三菱 - MITSUBISHI 晶体晶体管
页数 文件大小 规格书
2页 28K
描述
INSULATED GATE BIPOLAR TRANSISTOR

CT90AM-18 技术参数

生命周期:Transferred零件包装代码:TO-3PL
包装说明:FLANGE MOUNT, R-PSFM-T3针数:2
Reach Compliance Code:unknown风险等级:5.38
外壳连接:COLLECTOR最大集电极电流 (IC):60 A
集电极-发射极最大电压:900 V配置:SINGLE WITH BUILT-IN DIODE
门极发射器阈值电压最大值:6 V门极-发射极最大电压:25 V
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):250 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管元件材料:SILICON标称断开时间 (toff):500 ns
标称接通时间 (ton):150 ns

CT90AM-18 数据手册

 浏览型号CT90AM-18的Datasheet PDF文件第2页 
MITSUBISHI Nch IGBT  
CT90AM-18  
INSULATED GATE BIPOLAR TRANSISTOR  
CT90AM-18  
OUTLINE DRAWING  
Dimensions in mm  
5
20MAX.  
2
φ3.2  
2
1
0.5  
3
5.45 5.45  
4.0  
VCES ............................................................................... 900V  
IC .........................................................................................60A  
Simple drive  
Integrated Fast-recovery diode  
Small tail loss  
➁➃  
GATE  
COLLECTOR  
EMITTER  
COLLECTOR  
Low VCE Saturation Voltage  
TO-3PL  
APPLICATION  
Microwave oven, Electoromagnetic cooking devices, Rice-cookers  
MAXIMUM RATINGS (Tc = 25°C)  
Symbol  
VCES  
VGES  
VGEM  
IC  
Parameter  
Collector-emitter voltage  
Gate-emitter voltage  
Peak gate-emitter voltage  
Collector current  
Conditions  
Ratings  
Unit  
V
VGE = 0V  
900  
±25  
V
±30  
V
60  
A
ICM  
Collector current (Pulsed)  
Emitter current  
120  
A
IE  
40  
A
PC  
Maximum power dissipation  
Junction temperature  
Storage temperature  
250  
W
°C  
°C  
Tj  
–40 ~ +150  
–40 ~ +150  
Tstg  
Sep. 2000  

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