Datasheet > CT312Q-800S

CT312Q-800S

更新时间： 2024-11-09 14:52:47

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1710K
描述
TO-263K

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中文翻译

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数据手册

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CT312Q-800S 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

TO-263K Plastic-Encapsulate T

hyristors

3Q TRIACs

CT312Q

MAIN CHARACTERISTICS

I_T(RMS)

12A

TO-263K

CT312Q-600S/C/B

600V

CT312Q-800S/C/B 800V

1.55V

V_DRM/V_RRM

V_TM

1.MAIN TERMINAL 1

2.MAIN TERMINAL 2

3.GATE

FEATURES



NPNPN 5-layer Structure TRIACs

Mesa Glass Passivated Technology

Multi Layers Metal Electrodes

High Junction Temperature

Good Commutation Performance

High dV/dt and dI/dt

APPLICATIONS

MARKING



Heater Control

Motor Speed Controller

Mixer

CT312Q:Series Code



600S:Depends on VDRM

and IGT

XXX:Internal Code

ABSOLUTE RATINGS ( T_a=25℃ unless otherwise noted )

Symbol

Parameter

Unit

Test condition

Value

CT312Q-600S/C/B

CT312Q-800S/C/B

600

Repetitive peak off-

state voltage

V_DRM/ V_RRM

T_j=25℃

800

I_T(RMS)

I_TSM

RMS on-state current

TO-263K(T_C≤105℃)，Fig. 1,2

Full sine wave ，T_j(init)=25℃,

tp=20ms; Fig. 3,5

Non repetitive surge

peak on-state current

120

I²t

I²t value

tp=10ms

A²s

A/μs

Critical rate of rise of I_G=2*I_GT, tr≤10ns, F=120H_Z,

Ⅰ-Ⅱ-Ⅲ

dI_T/dt

T_j=125℃

on-state current

Ⅳ

n/a

I_GM

P_G(AV)

T_STG

T_j

Peak gate current

Average gate power

Storage temperature

tp=20µs, T_j=125℃

T_j=125℃

-40~+150

-40~+125

℃

Operating junction

temperature

www.jscj-elec.com

Rev. - 1.0

12 3 4

中文翻译

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