Datasheet > CT25AS-8

CT25AS-8

更新时间： 2024-09-20 22:17:47

品牌	Logo	应用领域
三菱 - MITSUBISHI		晶体晶体管栅
页数	文件大小	规格书
2页	35K
描述
STROBE FLASHER USE

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中文翻译

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数据手册

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CT25AS-8 数据手册

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR

CT25AS-8

STROBE FLASHER USE

CT25AS-8

OUTLINE DRAWING

Dimensions in mm

6.5

0.5 ± 0.1

5.0 ± 0.2

1.0

0.9MAX.

0.5 ± 0.2

0.8

2.3 2.3

w r

q GATE

w COLLECTOR

e EMITTER

r COLLECTOR

¡VCES ................................................................................400V

¡ICM ....................................................................................150A

MP-3

APPLICATION

Strobe Flasher.

MAXIMUM RATINGS (Tc = 25°C)

Symbol

VCES

VGES

VGEM

ICM

Parameter

Conditions

Ratings

Unit

Collector-emitter voltage

Gate-emitter voltage

VGE = 0V

400

±30

±40

150

VCE = 0V, See notice 4

VCE = 0V, tw = 0.5s

See figure 1

Peak gate-emitter voltage

Collector current (Pulsed)

Junction temperature

Storage temperature

–40 ~ +150

°C

Tstg

ELECTRICAL CHARACTERISTICS (Tj = 25°C)

Symbol Parameter

Limits

Typ.

—

Test conditions

Unit

Min.

Max.

—

V(BR)CES Collector-emitter breakdown voltage IC = 1mA, VGE = 0V

450

—

µA

ICES

Collector-emitter leakage current VCE = 400V, VGE = 0V

Gate-emitter leakage current VGE = ±40V, VCE = 0V

Gate-emitter threshold voltage VCE = 10V, IC = 1mA

—

IGES

—

±0.1

7.0

VGE(th)

—

Feb.1999

中文翻译

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