生命周期: | Transferred | 包装说明: | IN-LINE, R-PSIP-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.26 | Is Samacsys: | N |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 130 A |
集电极-发射极最大电压: | 400 V | 配置: | SINGLE |
门极发射器阈值电压最大值: | 7 V | 门极-发射极最大电压: | 30 V |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CT20VML8 | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 400V V(BR)CES | 130A I(C) | TO-221 | |
CT20VML-8 | MITSUBISHI |
获取价格 |
STROBE FLASHER USE | |
CT20VML-8 | POWEREX |
获取价格 |
STROBE FLASHER USE | |
CT20VML-8 | RENESAS |
获取价格 |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR | |
CT20VS8 | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 400V V(BR)CES | 130A I(C) | TO-263AB | |
CT20VS-8 | RENESAS |
获取价格 |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR | |
CT20VS-8 | MITSUBISHI |
获取价格 |
STROBE FLASHER USE | |
CT20VS-8 | POWEREX |
获取价格 |
STROBE FLASHER USE | |
CT20VSL8 | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 400V V(BR)CES | 130A I(C) | TO-263AB | |
CT20VSL-8 | MITSUBISHI |
获取价格 |
STROBE FLASHER USE |