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CSRS085V0-G PDF预览

CSRS085V0-G

更新时间: 2024-11-07 06:49:15
品牌 Logo 应用领域
上华 - COMCHIP /
页数 文件大小 规格书
4页 129K
描述
ESD Protection Array

CSRS085V0-G 数据手册

 浏览型号CSRS085V0-G的Datasheet PDF文件第2页浏览型号CSRS085V0-G的Datasheet PDF文件第3页浏览型号CSRS085V0-G的Datasheet PDF文件第4页 
ESD Protection Array  
CSRS065V0-G/CSRS045V0-G/CSRS085V0-G  
S
Working Voltage: 5Volts  
RoHS Device  
O
T
S
8
-
O
C
I
-
T
2
O
-
3
S
1
-
6
4
3
Features  
-Fast Reverse Recovery Time.  
SOT-23-6  
-Fast Turn on Time.  
-Low Capacitance SMD Packages.  
-16kV IEC61000-4-2 capable.  
0.119(3.02)  
0.111(2.82)  
Mechanical Data  
0.067(1.70)  
0.059(1.50)  
-Case: SOT-23-6 for CSRS065V0-G,  
SOT-143 for CSRS045V0-G,  
0.079(2.00)  
0.071(1.80)  
CircuitSDOIiCa-g8 rfoarmCSRS085V0-G.  
SOT-143  
0.119(3.00)  
0.110(2.80)  
CSRS065V0-G CSRS045V0-G CSRS085V0-G  
0.056(1.40)  
0.047(1.20)  
Applications  
0.083(2.10)  
0.066(1.70)  
Transient  
Transient  
suppressed  
+ Rail  
SOIC-8  
1.28  
1.26  
Receiver  
Driver  
6.01  
5.97  
3.83  
3.79  
GND  
Marking  
0.42  
0.40  
4.85  
4.81  
5V4  
SRV  
Dimensions in millimeters  
Pin1  
Pin1  
Maximum Rating (at TA=25°C unless otherwise noted)  
Symbol  
Parameter  
Value  
Unit  
Operating temperature  
TJ  
-55 to +150  
°C  
Electrical Characteristics (at TA=25°C unless otherwise noted)  
Symbol  
Parameter  
Conditions  
Min.  
Max.  
Unit  
Forward voltage  
IF=50mA  
VF  
VRWM  
VBD  
IR  
1.2  
5
V
V
Reverse stand-off voltage  
Diode breakdown voltage  
Reverse leakage current  
IR=1μA  
6
V
μA  
VRWM=5V  
5
5
f=1MHz, VR=0V, Line to ground  
f=1MHz, VR=0V, Line to Line  
Junction capacitance  
pF  
CT  
ESD capability  
IEC 61000-4-2  
ESD  
PPP  
16  
kV  
W
Peak pulse power  
TP=8/20μS  
300  
REV:B  
Page 1  
QW-BP013  
Comchip Technology CO., LTD.  

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