Datasheet > CSB649AB

CSB649AB

更新时间： 2024-11-09 23:43:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	42K
描述
TRANSISTOR \| BJT \| PNP \| 160V V(BR)CEO \| 1.5A I(C) \| TO-126

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中文翻译

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数据手册

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CSB649AB 数据手册

IS/ISO 9002

Lic# QSC/L- 000019.2

IS / IECQC 700000

IS / IECQC 750100

Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

CSB649, CSB649A

CSD669, CSD669A

TO-126 (SOT-32) Plastic Package

CSB649, 649A

CSD669, 669A

PNP PLASTIC POWER TRANSISTORS

NPN PLASTIC POWER TRANSISTORS

Low frequency Power Amplifier

PIN CONFIGURATION

1. EMITTER

2. COLLECTOR

3. BASE

ALL DIMENSIONS IN MM

ABSOLUTE MAXIMUM RATINGS

6 4 9

6 6 9

max. 180

max. 120

max.

6 4 9 A

6 6 9 A

180 V

160 V

Collector-base voltage (open emitter)

Collector-emitter voltage (open base)

Collector current

CBO

CEO

1.5

Total power dissipation up to T = 25

max.

Junction temperature

150

Collector-emitter saturation voltage

= 0.5 A; I = 50 mA

CEsat

max.

1.0

D.C. current gain

= 150 mA; V

= 5 V

min.

max. 320

200

RATINGS (at T =25 C unless otherwise specified)

Limiting values

Collector-base voltage (open emitter)

Collector-emitter voltage (open base)

max. 180

max. 120

180 V

160 V

CBO

CEO

Continental Device India Limited

Data Sheet

Page 1 of 3

12 3

中文翻译

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与CSB649AB相关器件

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CSB649AC	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 160V V(BR)CEO \| 1.5A I(C) \| TO-126
CSB649B	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 120V V(BR)CEO \| 1.5A I(C) \| TO-126
CSB649C	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 120V V(BR)CEO \| 1.5A I(C) \| TO-126
CSB649D	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 120V V(BR)CEO \| 1.5A I(C) \| TO-126
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CSB7002-02-023-001	SKYWORKS	获取价格	Pin Diode, 80V V(BR), Silicon
CSB7002-03	SKYWORKS	获取价格	Pin Diode, 80V V(BR), Silicon
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