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CSAL1013 PDF预览

CSAL1013

更新时间: 2024-11-09 01:22:23
品牌 Logo 应用领域
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页数 文件大小 规格书
4页 705K
描述
SILICON PLANAR EPITAXIAL TRANSISTORS

CSAL1013 数据手册

 浏览型号CSAL1013的Datasheet PDF文件第2页浏览型号CSAL1013的Datasheet PDF文件第3页浏览型号CSAL1013的Datasheet PDF文件第4页 
Continental Device India Limited  
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company  
SILICON PLANAR EPITAXIAL TRANSISTORS  
CSAL1013 PNP  
CSCL2383 NPN  
TO-92L  
Plastic Package  
Colour TV Audio output and Vertical Deflecfion Output  
ABSOLUTE MAXIMUM RATINGS  
VALUE  
DESCRIPTION  
SYMBOL  
UNITS  
VCBO  
160  
Collector Base Voltage  
V
VCEO  
VEBO  
IC  
160  
6
Collector Emitter Voltage  
Emitter Base Voltage  
V
V
1.0  
0.5  
0.9  
150  
Collector Current  
A
IB  
Base Current  
A
Collector Power Dissipation @ Ta=25ºC  
PC  
W
ºC  
Tj  
Junction Temperature  
Storage Temperature  
Tstg  
- 55 to +150  
ºC  
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)  
DESCRIPTION  
SYMBOL  
TEST CONDITION  
MIN TYP MAX  
UNITS  
ICBO  
VCB=150V, IE = 0  
Collector Cut Off Current  
1.0  
1.0  
mA  
IEBO  
VCEO  
VEB=6V, IC = 0  
Emitter Cut Off Current  
Collector Emitter Voltage  
DC Current Gain  
mA  
IC=10mA, IB=0  
160  
60  
V
*hFE  
VCE=5V, IC=200mA  
IC=500mA, IB=50mA  
IC=5mA, VCE=5V  
320  
1.5  
*VCE (sat)  
Collector Emitter Saturation Voltage  
V
V
VBE (on)  
fT  
Base Emitter On Voltage  
Transition Frequency  
0.45  
0.75  
IC=200mA, VCE=5V  
NPN  
PNP  
20  
15  
MHz  
MHz  
Cob  
IE=0, VCB=10V, f=1MHz  
Output Capacitance  
NPN  
PNP  
20  
35  
pF  
pF  
hFE Classification  
R : 60 - 120,  
O : 100 - 200 ,  
Y : 160 - 320  
CSAL1013_CSCL2383Rev_1 130105E  
*Pulse Test: Pulse Width <300ms, Duty Cycle<2%  
Data Sheet  
Page 1 of 4  
Continental Device India Limited  

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