Datasheet > CS6N70A31R-G

CS6N70A31R-G

更新时间： 2024-03-03 10:11:34

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	624K
描述
TO-251

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CS6N70A31R-G 数据手册

CS6N70 A31R-G

○

Electrical Characteristics（Tc= 25℃ unless otherwise specified）：

OFF Characteristics

Rating

Typ.

Unit

Parameter

Test Conditions

Symbol

Min.

700

Max.

V_GS=0V, I_D=250µA

Drain to Source Breakdown Voltage

Bvdss Temperature Coefficient

V_DSS

ID=250uA,Reference25℃

V/℃

µA

0.72

ΔBV_DSS/ΔT_J

V_DS=700V, V_GS= 0V,

T_a= 25℃

V_DS=560V, V_GS= 0V,

T_a= 125℃

Drain to Source Leakage Current

I_DSS

100

-100

V_GS=+30V

V_GS=-30V

Gate to Source Forward Leakage

Gate to Source Reverse Leakage

I_GSS(F)

I_GSS(R)

ON Characteristics

Rating

Parameter

Test Conditions

Symbol

Units

Min.

Typ. Max.

V_GS=10V,I_D=3A

Drain-to-Source On-Resistance

Gate Threshold Voltage

R_DS(ON)

V_GS(TH)

1.28 1.60

Ω

V_DS= V_GS, I_D= 250µA

2.0

4.0

Pulse width tp≤300µs,δ≤2%

Dynamic Characteristics

Rating

Typ.

5.8

Parameter

Test Conditions

Symbol

Units

Min.

Max.

V_DS=15V, I_D=3A

f = 1.0MHz

Forward Transconductance

Gate resistance

g_fs

2.0

Ω

Input Capacitance

C_iss

C_oss

C_rss

1102

V_GS= 0V V_DS= 25V

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

4.5

Resistive Switching Characteristics

Rating

Typ.

Parameter

Test Conditions

Symbol

Units

Min.

Max.

Turn-on Delay Time

Rise Time

t_d(ON)

t_d(OFF)

t_f

I_D=6A V_DD= 350V

R_G=10Ω

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate to Source Charge

Gate to Drain (“Miller”)Charge

Q_g

I_D=6A V_DD=560V

V_GS= 10V

Q_gs

Q_gd

5.2

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