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CS6N90ARR PDF预览

CS6N90ARR

更新时间: 2024-09-30 15:18:15
品牌 Logo 应用领域
华润微 - CRMICRO /
页数 文件大小 规格书
10页 388K
描述
TO-262

CS6N90ARR 数据手册

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Silicon N-Channel Power MOSFET  
CS6N90 ARR  
R
General Description  
VDSS  
900  
V
A
CS6N90 ARR, the silicon N-channel Enhanced  
VDMOSFETs, is obtained by the self-aligned planar Technology  
which reduce the conduction loss, improve switching  
performance and enhance the avalanche energy. The transistor  
can be used in various power switching circuit for system  
miniaturization and higher efficiency. The package form is TO-262,  
which accords with the RoHS standard.  
ID  
6
PD(TC=25)  
RDS(ON)Typ  
133  
1.85  
W
Features  
l Fast Switching  
l Low ON Resistance(Rdson2.3)  
l Low Gate Charge (Typical Data: 31.1nC)  
l Low Reverse transfer capacitances(Typical:5.2 pF)  
l 100% Single Pulse avalanche energy Test  
Applications:  
Power switch circuit of adaptor and charger.  
AbsoluteTJ= 25unless otherwise specified:  
Parameter  
Symbol  
VDSS  
Rating  
Units  
Drain-to-Source Voltage  
900  
V
A
Continuous Drain Current TC = 25 °C  
Continuous Drain Current TC = 100 °C  
Pulsed Drain Current TC = 25 °C  
Gate-to-Source Voltage  
6
ID  
3.7  
A
a1  
24  
A
IDM  
VGS  
V
±30  
a2  
Single Pulse Avalanche Energy  
Peak Diode Recovery dv/dt  
466  
mJ  
V/ns  
W
EAS  
a3  
5.0  
dv/dt  
Power Dissipation TC = 25 °C  
Derating Factor above 25°C  
133  
1.06  
PD  
W/℃  
Operating Junction and Storage Temperature Range  
Maximum Temperature for Soldering  
TJTstg  
15055 to 150  
300  
TL  
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10  
2020V01  

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