Silicon N-Channel Power MOSFET
CS6N70 A4D-G
R
○
General Description:
VDSS
700
6
V
A
CS6N70 A4D-G, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-252, which accords with the
ID
PD(TC=25℃)
RDS(ON)Typ
100
1.5
W
Ω
RoHS standard.
Features:
Fast Switching
ESD Improved Capability
Low Gate Charge (Typical Data:15.5nC)
Low Reverse transfer capacitances(Typical:6pF)
100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Parameter
Symbol
VDSS
Rating
Units
Drain-to-Source Voltage
700
V
A
Continuous Drain Current
6
ID
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
3.6
A
a1
24
A
IDM
Gate-to-Source Voltage
VGS
V
±30
a2
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
60
mJ
V/ns
W
EAS
a3
5.0
dv/dt
Power Dissipation
100
0.80
PD
Derating Factor above 25°C
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
W/℃
V
VESD(G-S)
TJ,Tstg
TL
3000
150,–55 to 150
300
℃
℃
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10
2017V01