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CS6N70A4D-G PDF预览

CS6N70A4D-G

更新时间: 2024-04-09 19:01:33
品牌 Logo 应用领域
华润微 - CRMICRO /
页数 文件大小 规格书
10页 550K
描述
TO-252

CS6N70A4D-G 数据手册

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Silicon N-Channel Power MOSFET  
CS6N70 A4D-G  
R
General Description  
VDSS  
700  
6
V
A
CS6N70 A4D-G, the silicon N-channel Enhanced  
VDMOSFETs, is obtained by the self-aligned planar Technology  
which reduce the conduction loss, improve switching  
performance and enhance the avalanche energy. The transistor  
can be used in various power switching circuit for system  
miniaturization and higher efficiency. The package form is  
TO-252, which accords with the  
ID  
PD(TC=25)  
RDS(ON)Typ  
100  
1.5  
W
RoHS standard.  
Features  
Fast Switching  
ESD Improved Capability  
Low Gate Charge (Typical Data:15.5nC)  
Low Reverse transfer capacitances(Typical:6pF)  
100% Single Pulse avalanche energy Test  
Applications:  
Power switch circuit of adaptor and charger.  
AbsoluteTc= 25unless otherwise specified:  
Parameter  
Symbol  
VDSS  
Rating  
Units  
Drain-to-Source Voltage  
700  
V
A
Continuous Drain Current  
6
ID  
Continuous Drain Current TC = 100 °C  
Pulsed Drain Current  
3.6  
A
a1  
24  
A
IDM  
Gate-to-Source Voltage  
VGS  
V
±30  
a2  
Single Pulse Avalanche Energy  
Peak Diode Recovery dv/dt  
60  
mJ  
V/ns  
W
EAS  
a3  
5.0  
dv/dt  
Power Dissipation  
100  
0.80  
PD  
Derating Factor above 25°C  
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)  
Operating Junction and Storage Temperature Range  
Maximum Temperature for Soldering  
W/℃  
V
VESD(G-S)  
TJTstg  
TL  
3000  
15055 to 150  
300  
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10  
2017V01  

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