Datasheet > CS300N04A8

CS300N04A8

更新时间： 2024-10-15 17:01:47

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	501K
描述
TO-220

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CS300N04A8 数据手册

Silicon N-Channel Power MOSFET

CS300N04 A8

○

General Description：

V_DSS

I_D_（

300

120

271.7

1.6

CS300N04 A8, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the high density Trench

technology which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. This device is

suitable for use as a load switch and PWM applications. The

package form is TO-220AB, which accords with the RoHS

standard.

Silicon limited current^）

I_D_（

Package limited^）

R_DS(ON)Typ

mΩ

Features：

l Fast Switching

l Low ON Resistance(Rdson≤2.0 mΩ)

l Low Gate Charge

l Low Reverse transfer capacitances

l 100% Single Pulse avalanche energy Test

Applications：

l BLDC Motor drive applications

Half-bridge and full-bridge topologies

Synchronous rectifier applications

DC/DC and AC/DC converters

Absolute（Tj= 25℃ unless otherwise specified）

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

300

Continuous Drain Current T_C= 25 °C

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current T_C= 25 °C

Gate-to-Source Voltage

I_D

193.6

1200

I_DM

V_GS

±20

Avalanche Energy

800

E_AS

Power Dissipation T_C= 25 °C

Derating Factor above 25°C

271.7

P_D

2.17

W/℃

℃

Operating Junction and Storage Temperature Range

MaximumTemperature for Soldering

T_J，T_stg

150，–55 to 150

300

T_L

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