是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.30.00.80 | 风险等级: | 5.84 |
外壳连接: | ANODE | 配置: | SINGLE |
最大直流栅极触发电流: | 80 mA | JEDEC-95代码: | TO-218 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | 260 |
认证状态: | Not Qualified | 最大均方根通态电流: | 55 A |
断态重复峰值电压: | 200 V | 重复峰值反向电压: | 200 V |
表面贴装: | NO | 端子面层: | MATTE TIN (315) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 10 | 触发设备类型: | SCR |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CS218-55D | CENTRAL |
获取价格 |
SILICON CONTROLLED RECTIFIER |
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CS218-55DLEADFREE | CENTRAL |
获取价格 |
Silicon Controlled Rectifier, 55A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-218 |
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CS218-55M | CENTRAL |
获取价格 |
SILICON CONTROLLED RECTIFIER |
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CS218-55MLEADFREE | CENTRAL |
获取价格 |
Silicon Controlled Rectifier, 55A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-218 |
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CS218-55N | CENTRAL |
获取价格 |
SILICON CONTROLLED RECTIFIER |
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CS218-55P | CENTRAL |
获取价格 |
SILICON CONTROLLED RECTIFIER |
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CS218-55PB | CENTRAL |
获取价格 |
SILICON CONTROLLED RECTIFIER |
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CS218-55PLEADFREE | CENTRAL |
获取价格 |
Silicon Controlled Rectifier, 55A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-218 |
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CS218-55PPBFREE | CENTRAL |
获取价格 |
暂无描述 |
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CS218I-30B | CENTRAL |
获取价格 |
ISOLATED TAB SCR 30 AMP 200 THRU 1200 VOLTS |
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