Datasheet > CS200A

CS200A

更新时间： 2024-11-29 03:26:55

品牌	Logo	应用领域
富士通 - FUJITSU		/
页数	文件大小	规格书
2页	604K
描述
65nm CMOS Technology

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CS200A 数据手册

65nm CMOS Technology, CS200 / CS200A

Description

As miniaturization of silicon devices progresses,

Fujitsu provides the most competitive, world-class

technology to ASIC and COT customers. Fujitsu's

65nm technology has shrunk gates by 25% when

compared to the 90nm technology.

Fujitsu will start tape-out acceptance for the

technology in early 2006.

Features

• The 30nm long gate, only 75% the size of the

• Transistor density doubled compared with the

90nm generation.

CS100 transistors.

• 20 to 30% faster performance than the 90nm

generation.

• SRAM cell area reduced 50% compared with the

90nm generation.

Specifications

65nm (CS200)

65nm (CS200A)

Gate length

30nm

50nm

Core VDD

1.0V

1.2V

Gate oxide thickness (physical)

Gate electrode

1.1nm

1.7nm

NiSi / Poly-Si

NiSi

CoSi2 / Poly-Si

Source / drain electrode

Interconnects

CoSi2

11-Cu + 1-Al

0.18µm

Metal 1 pitch

Inter-level dielectric

Drain current enhancement

Porous ULK (k = 2.25)

Advanced stress control

中文翻译

下载PDF

与CS200A相关器件

型号	品牌	获取价格	描述	数据表
CS200HP	FUJITSU	获取价格	65nm CMOS Standard Cell
CS200L	FUJITSU	获取价格	65nm CMOS Standard Cell
CS201	VISHAY	获取价格	Capacitor Networks, Single-In-Line,Conformal Coated SIP,
CS201	FUJITSU	获取价格	Semicustom CMOS Standard Cell
CS201	MAXWELL	获取价格	Transistor Output Optocoupler,
CS201/L2	MAXWELL	获取价格	Transistor Output Optocoupler
CS201/L2S	MAXWELL	获取价格	Transistor Output Optocoupler
CS201_08	VISHAY	获取价格	Capacitor Networks, Single-In-Line,Conformal Coated SIP,
CS2010	VISHAY	获取价格	RESISTOR, 1 W, 0.1; 0.5; 1; 2; 5; 10 %, 25; 50; 100 ppm, 1000000 ohm - 50000000 ohm, SURFA
CS20100CT-A	CITC	获取价格	Super Low Barrier High Voltage Power Rectifier