Datasheet > CS19N10 A0

CS19N10 A0

更新时间： 2024-11-19 17:01:15

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	678K
描述
TO-263(或D2PAK)

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CS19N10 A0 数据手册

Silicon N-Channel Power MOSFET

CS19N10 A0

○

General Description：

V_DSS

100

CS19N10 A0, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the high density Trench

technology which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. This device is

suitable for use as a load switch and PWM applications. The

package form is TO-263, which accords with the RoHS standard.

Features：

I_D

56.8

R_DS(ON)Typ

mΩ

l Fast Switching

l Low ON Resistance(Rdson≤67 mΩ)

l Low Gate Charge

l Low Reverse transfer capacitances

l 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of adaptor and charger.

Absolute（Tj= 25℃ unless otherwise specified）

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

100

Continuous Drain Current T_C= 25 °C

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current T_C= 25 °C

Gate-to-Source Voltage

I_D

13.7

±20

I_DM

V_GS

Avalanche Energy

46.9

E_AS

Power Dissipation T_C= 25 °C

Derating Factor above 25°C

56.8

P_D

0.454

W/℃

℃

Operating Junction and Storage Temperature Range

T_J，T_stg

150，–55 to 150

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10

2020V01

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