Datasheet > CS19N40ANR

CS19N40ANR

更新时间： 2024-11-19 15:18:51

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	411K
描述
TO-3P(N)

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CS19N40ANR 数据手册

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Silicon N-Channel Power MOSFET

CS19N40 ANR

General Description：

V_DSS

400

CS19N40 ANR, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency. The package form is TO-3P

（N）, which accords with the RoHS standard..

Features：

I_D

P_D(T_C=25℃)

R_DS(ON)Typ

231

0.23

Ω

l Fast Switching

l Low ON Resistance(Rdson≤0.30Ω)

l Low Gate Charge (Typical Data:42nC)

l Low Reverse transfer capacitances(Typical:12.3pF)

l 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of electron ballast and adaptor.

Absolute（T_J= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

400

Units

Drain-to-Source Voltage

Continuous Drain Current T_C= 25 °C

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current T_C= 25 °C

Gate-to-Source Voltage

I_D

I_DM

V_GS

±30

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation T_C= 25 °C

Derating Factor above 25°C

720

5.0

V/ns

E_AS

dv/dt

231

1.85

P_D

W/℃

Operating Junction and Storage Temperature Range

Maximum Temperature for Soldering

T_J，T_stg

150，–55 to 150

℃

300

T_L

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

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