Datasheet > CRXI04D065G2

CRXI04D065G2

更新时间： 2024-11-24 15:18:27

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
7页	831K
描述
TO-220-2L

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CRXI04D065G2 数据手册

CRXI04D065G2

Silicon Carbide Schottky Diode 650 V, 4 A, 10 nC

General Description

Product Summary

V_RRM

I_F(T_C=160℃)

Q_C

This product family is CRM's second generation SiC JBS,

with lower VF and offers state of the art performance. It

is designed for high frequency applications where high

efficiency and high reliability are required. It is qualified

and manufactured on the productive 6 inch SiC line in

China fully owned by CR MICRO.

650 V

4 A

10 nC

Features

• Low conduction loss due to low V_F

• Extremely low switching loss by tiny Q_C

• Highly rugged due to better surge current

• Industrial standard quality and reliability

Applications

• Server

• Telecom

• High performance SMPS

• Power factor correction

TO-220-2

Equivalent circuit

Package Marking and Ordering Information

Part #

Marking

Package

CRXI04D065G2

TO-220-2

Page 1

12 3 4 5 6 7

中文翻译

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