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CRXL10D120G2 PDF预览

CRXL10D120G2

更新时间: 2024-11-20 17:01:51
品牌 Logo 应用领域
华润微 - CRMICRO /
页数 文件大小 规格书
7页 820K
描述
TO-252-2L

CRXL10D120G2 数据手册

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CRXL10D120G2  
Silicon Carbide Schottky Diode 1200 V, 10 A, 46 nC  
General Description  
Product Summary  
VRRM  
IF (TC=159℃)  
QC  
This product family is CRM's second generation SiC JBS,  
with lower VF and offers state of the art performance. It  
is designed for high frequency applications where high  
efficiency and high reliability are required. It is qualified  
and manufactured on the productive 6 inch SiC line in  
China fully owned by CR MICRO.  
1200 V  
10 A  
46 nC  
Features  
• Low conduction loss due to low VF  
• Extremely low switching loss by tiny QC  
• Highly rugged due to better surge current  
• Industrial standard quality and reliability  
Applications  
• Solar inverter  
• EV charge  
• High performance SMPS  
• Power factor correction  
TO-252-2  
Equivalent circuit  
Package Marking and Ordering Information  
Part #  
Marking  
Package  
CRXL10D120G2  
CRXL10D120G2  
TO-252-2  
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