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CRS04(TE85L,Q,M) PDF预览

CRS04(TE85L,Q,M)

更新时间: 2024-11-18 21:01:31
品牌 Logo 应用领域
东芝 - TOSHIBA 二极管
页数 文件大小 规格书
5页 178K
描述
DIODE SCHOTTKY 40V 1A 3-2A1A

CRS04(TE85L,Q,M) 技术参数

生命周期:ActiveReach Compliance Code:unknown
Factory Lead Time:12 weeks风险等级:1.45
二极管类型:RECTIFIER DIODEBase Number Matches:1

CRS04(TE85L,Q,M) 数据手册

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CRS04  
TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type  
CRS04  
Switching Mode Power Supply Applications  
Unit: mm  
Portable Equipment Battery Applications  
Forward voltage: V  
= 0.49 V (max)  
FM  
Average forward current: I  
= 1.0 A  
F (AV)  
Repetitive peak reverse voltage: V  
= 40 V  
RRM  
Suitable for compact assembly due to small surface-mount package  
“SFLATTM” (Toshiba package name)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Repetitive peak reverse voltage  
Average forward current  
V
40  
V
A
RRM  
I
1.0 (Note 1)  
F (AV)  
Peak one cycle surge forward current  
(non-repetitive)  
I
20 (50 Hz)  
A
FSM  
Junction temperature  
Storage temperature  
T
40~150  
40~150  
°C  
°C  
j
T
stg  
JEDEC  
JEITA  
Note 1: Ta = 31°C  
Device mounted on a glass-epoxy board  
(board size: 50 mm × 50 mm, land size: 6 mm × 6 mm)  
TOSHIBA  
3-2A1A  
Note 2: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
Weight: 0.013 g (typ.)  
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are  
within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
V
V
V
I
I
I
= 0.1 A  
= 0.7 A  
= 1.0 A  
0.395  
0.475  
0.51  
0.6  
0.49  
FM (1)  
FM (2)  
FM (3)  
FM  
FM  
FM  
Peak forward voltage  
I
V
V
V
= 5 V  
RRM (1)  
RRM (2)  
RRM  
RRM  
Repetitive peak reverse current  
Junction capacitance  
μA  
I
= 40 V  
100  
C
= 10 V, f = 1.0 MHz  
R
47  
pF  
j
Device mounted on a ceramic board  
(soldering land: 2 mm × 2 mm)  
70  
Thermal resistance (junction to ambient)  
Thermal resistance (junction to lead)  
R
°C/W  
°C/W  
th (j-a)  
Device mounted on a glass-epoxy  
board  
(soldering land: 6 mm × 6 mm)  
140  
20  
R
th (j-)  
Start of commercial production  
1999-07  
1
2013-11-01  

CRS04(TE85L,Q,M) 替代型号

型号 品牌 替代类型 描述 数据表
CRS04(TE85L) TOSHIBA

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DIODE 1 A, 40 V, SILICON, SIGNAL DIODE, S-FLAT-2, Signal Diode

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