Datasheet > CRMM6602C

CRMM6602C

更新时间： 2024-12-01 15:18:55

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
11页	1151K
描述
SOT-23-6

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中文翻译

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数据手册

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CRMM6602C 数据手册

CRMM6602C

30V Complementary Power MOSFET

华润微电子(重庆)有限公司

Features

Product Summary

Symbol

V_DS

N-Ch

30V

P-Ch

-30V

• Uses CRM(CQ) advanced Trench technology

• Extremely low on-resistance R_DS(on)

• Excellent Q_gxR_DS(on)product(FOM)

• Complementary N-ch and P-ch MOSFET

R_{DS(on) typ.}

I_D

25mΩ

60mΩ

-3.5A

Applications

100% DVDS Tested

• Motor drive

100% Avalanche Tested

Package Marking and Ordering Information

Part #

Marking

Package

Packing Reel Size

Taping N/A

Tape Width

N/A

Qty

CRMM6602C

SOT-23-6

3000pcs

Absolute Maximum Ratings

Parameter

Maximum

Symbol

Unit

N-Ch

P-Ch

-30

V_DS

I_D

Drain-source voltage

Continuous drain current T_C= 25°C (Silicon limit)

-3.5

-14

Continuous drain current T_C= 25°C (Package limit)

I_D

Pulsed drain current (T_C= 25°C, t_plimited by T_jmax

)

I_{D pulse}

E_AS

±20

1.3

Avalanche energy, single pulse (L=0.5mH, Rg=25Ω)

Gate-Source voltage

V_GS

±20

1.3

Power dissipation (T_C= 25°C)

P_tot

°C

T_j, T _stg

Operating junction and storage temperature

-55...+150

Rev3.1

©China Resources Microelectronics (Chongqing) Limited

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