Datasheet > CRF-35010-101

CRF-35010-101

更新时间： 2024-11-11 20:02:07

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
9页	215K
描述
Transistor

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CRF-35010-101 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

CRF-35010-101 数据手册

CRF-35010-101

10 W, 3400-3800 MHz, SiC RF Power MESFET

PRELIMINARY

Package Type 440101

Features

Application

• 3.4 - 3.8 GHz Operation

• 10 dB Small Signal Gain

• -40 dBc OFDM at 1.5 W

• 17% Drain Efficiency at 1.5 W

• 10 W P_1dB

• WiMAX

• Internally Matched

• 48 V Class A/B Operation

• High Breakdown Voltage

• High Temperature Operation

PN: CRF35010-101

Description

Cree’s CRF-35010 is an internally-matched silicon carbide (SiC) RF power

Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior

properties compared to silicon or gallium arsenide, including higher

breakdown voltage, higher saturated electron drift velocity, and higher

thermal conductivity. SiC MESFETs offer greater efficiency, power density,

and wider bandwidths compared to Si and GaAs transistors.

Absolute Maximum Ratings (not simultaneous) at 25°C Case Temperature

Parameter

Symbol

V_DSS

V_GS

Rating

Units

Volts

^oC

Drain-Source Voltage

Gate to Source Voltage

Storage Temperature

-20, +3

-55, +150

295

T_STG

T_J

Operating Junction Temperature

^oC

Thermal Resistance, Junction to Case

Soldering Temperature

5.6

^oC/W

^oC

R_Θ

T_S

225

©Cree, Inc. 2005

Rev 1.01 – May 27, 2005

Specifications subject to change without notice

http://www.cree.com/

12 3 4 5 6 7...9

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