Document Number: MW6IC2240N
Rev. 6, 12/2008
Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MW6IC2240N wideband integrated circuit is designed with on-chip
matching that makes it usable from 2110 to 2170 MHz. This multi-stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular base
station modulation formats including TD-SCDMA.
MW6IC2240NBR1
MW6IC2240GNBR1
Final Application
2110-2170 MHz, 4.5 W AVG., 28 V
2 x W-CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
• Typical 2-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ1 = 210 mA,
I
DQ2 = 370 mA, Pout = 4.5 Watts Avg., f = 2157 MHz, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 28 dB
Power Added Efficiency — 15%
IM3 @ 10 MHz Offset — -43 dBc in 3.84 MHz Bandwidth
ACPR @ 5 MHz Offset — -46 dBc in 3.84 MHz Bandwidth
Driver Application
• Typical 2-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ1
=
CASE 1329-09
TO-272 WB-16
PLASTIC
300 mA, IDQ2 = 320 mA, Pout = 25 dBm, Full Frequency Band (2110-
2170 MHz), Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01%
Probability on CCDF.
MW6IC2240NBR1
Power Gain — 29 dB
IM3 @ 10 MHz Offset — -59 dBc in 3.84 MHz Bandwidth
ACPR @ 5 MHz Offset — -62 dBc in 3.84 MHz Bandwidth
• Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 20 Watts CW
Output Power
• Stable into a 3:1 VSWR. All Spurs Below -60 dBc @ 100 mW to 10 Watts
CW Pout
Features
.
CASE 1329A-04
TO-272 WB-16 GULL
PLASTIC
• Characterized with Series Equivalent Large-Signal Impedance Parameters
and Common Source Scattering Parameters
MW6IC2240GNBR1
• On-Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
• Integrated Quiescent Current Temperature Compensation
with Enable/Disable Function (1)
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
GND
V
NC
NC
NC
1
2
3
4
5
16
15
GND
NC
DS1
V
DS1
RF
V
/
out
RF
6
14
in
RF
RF /V
out DS2
DS2
in
7
8
9
10
NC
V
V
GS1
GS2
V
GS1
V
GS2
V
DS1
Quiescent Current
Temperature Compensation
13
12
NC
GND
V
GND
DS1
(1)
11
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2005-2008. All rights reserved.
MW6IC2240NBR1 MW6IC2240GNBR1
RF Device Data
Freescale Semiconductor
1