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CR2AM

更新时间: 2024-02-25 15:21:05
品牌 Logo 应用领域
三菱 - MITSUBISHI /
页数 文件大小 规格书
6页 75K
描述
LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE

CR2AM 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.82
Is Samacsys:NBase Number Matches:1

CR2AM 数据手册

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MITSUBISHI SEMICONDUCTOR THYRISTOR  
CR2AM  
LOW POWER USE  
NON-INSULATED TYPE, GLASS PASSIVATION TYPE  
Dimensions  
CR2AM  
OUTLINE DRAWING  
in mm  
10 MAX  
0.5  
4
φ3.2±0.1  
TYPE NAME @  
VOLTAGE  
CLASS  
1.2±0.1  
0.8  
0.8  
0.5  
1.5 MIN  
2.5 2.5  
Measurement point of  
case temperature  
1 2 3  
10 MAX  
24  
CATHODE  
ANODE  
GATE  
1
2
3
4
• IT (AV) ...........................................................................2A  
• VDRM ..............................................................400V/600V  
• IGT .........................................................................100µA  
3
ANODE  
1
TO-202  
APPLICATION  
Control of household equipment such as electric blandets, leakage protector, static switch, other  
general purpose control applications, ignitors  
MAXIMUM RATINGS  
Voltage class  
Symbol  
Parameter  
Unit  
8
12  
VRRM  
Repetitive peak reverse voltage  
Non-repetitive peak reverse voltage  
DC reverse voltage  
400  
500  
320  
400  
320  
600  
720  
480  
600  
480  
V
V
V
V
V
VRSM  
VR (DC)  
VDRM  
1  
1  
Repetitive peak off-state voltage  
DC off-state voltage  
VD (DC)  
Symbol  
Parameter  
RMS on-state current  
Average on-state current  
Surge on-state current  
Conditions  
Ratings  
3.15  
2.0  
Unit  
A
IT (RMS)  
IT (AV)  
ITSM  
Commercial frequency, sine half wave, 180° conduction, Tc=75°C  
A
60Hz sine half wave 1 full cycle, peak value, non-repetitive  
20  
A
Value corresponding to 1 cycle of half wave 60Hz, Surge on-state  
current  
2
2
2
I t  
I t for fusing  
1.6  
A s  
PGM  
PG (AV)  
VFGM  
VRGM  
IFGM  
Tj  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate forward voltage  
Peak gate reverse voltage  
Peak gate forward current  
Junction temperature  
0.5  
W
W
V
0.1  
6
6
V
0.3  
A
–40 ~ +125  
–40 ~ +125  
1.6  
°C  
°C  
g
Tstg  
Storage temperature  
Weight  
Typical value  
1. With Gate-to-cathode resistance RGK=1kΩ  
Feb.1999  

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