Datasheet > CR2AM-8A

CR2AM-8A

更新时间： 2024-02-08 17:51:54

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
5页	70K
描述
LOW POWER USE GLASS PASSIVATION TYPE

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技术参数
数据手册

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CR2AM-8A 技术参数

生命周期：	Obsolete	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	HTS代码：	8541.30.00.80
风险等级：	5.84	外壳连接：	ANODE
配置：	SINGLE	最大直流栅极触发电流：	0.1 mA
JEDEC-95代码：	TO-202	JESD-30 代码：	R-PSFM-T3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	认证状态：	Not Qualified
最大均方根通态电流：	3.15 A	断态重复峰值电压：	400 V
重复峰值反向电压：	400 V	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
触发设备类型：	SCR	Base Number Matches：	1

CR2AM-8A 数据手册

MITSUBISHI SEMICONDUCTOR THYRISTOR

CR02AM-8A

LOW POWER USE

GLASS PASSIVATION TYPE

Dimensions

CR02AM-8A

OUTLINE DRAWING

in mm

φ5.0 MAX

4.4

VOLTAGE

CLASS

TYPE

NAME

TERMINAL

GATE TERMINAL

CIRCUMSCRIBE

CIRCLE

1.25 1.25

φ0.7

• IT (AV) ........................................................................0.3A

• VDRM ....................................................................... 400V

• IGT .........................................................................100µA

JEDEC : TO-92

APPLICATION

Strobe flasher

MAXIMUM RATINGS

Voltage class

Symbol

Parameter

Unit

VRRM

Repetitive peak reverse voltage

Non-repetitive peak reverse voltage

DC reverse voltage

400

500

320

400

320

VRSM

VR (DC)

VDRM

✽1

Repetitive peak off-state voltage

DC off-state voltage

VD (DC)

Symbol

Parameter

RMS on-state current

Average on-state current

Surge on-state current

Conditions

Ratings

0.47

0.3

Unit

IT (RMS)

IT (AV)

ITSM

Commercial frequency, sine half wave, 180° conduction, Ta=30°C

60Hz sine half wave 1 full cycle, peak value, non-repetitive

Value corresponding to 1 cycle of half wave 60Hz, surge on-state

current

I t

I t for fusing

0.4

A s

PGM

PG (AV)

VFGM

VRGM

IFGM

Peak gate power dissipation

Average gate power dissipation

Peak gate forward voltage

Peak gate reverse voltage

Peak gate forward current

Junction temperature

0.1

0.01

0.1

–40 ~ +125

0.23

°C

Tstg

Storage temperature

—

Weight

Typical value

✽1. With gate to cathode resistance RGK=1kΩ.

Feb.1999

12 3 4 5

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