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CR250-4 PDF预览

CR250-4

更新时间: 2024-10-28 09:30:59
品牌 Logo 应用领域
CENTRAL 整流二极管高压
页数 文件大小 规格书
2页 190K
描述
HIGH VOLTAGE SILICON RECTIFER 2000 THRU 4000 VOLTS 200mA

CR250-4 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:O-PALF-W2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.92
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):4 VJESD-30 代码:O-PALF-W2
JESD-609代码:e0最大非重复峰值正向电流:20 A
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:0.25 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:4000 V子类别:Rectifier Diodes
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

CR250-4 数据手册

 浏览型号CR250-4的Datasheet PDF文件第2页 
TM  
CR250-2 SERIES  
Central  
Semiconductor Corp.  
HIGH VOLTAGE  
SILICON RECTIFER  
2000 THRU 4000 VOLTS  
200mA  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CR250-2 series  
types are 200mA axial lead high voltage silicon  
rectifiers designed for general purpose high voltage  
applications.  
MARKING: FULL PART NUMBER  
DO-15 CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
A
SYMBOL CR250-2  
CR250-3  
CR250-4  
UNITS  
DC Blocking Voltage  
V
2000  
2000  
1400  
3000  
4000  
V
R
Peak Repetitive Reverse Voltage  
RMS Reverse Voltage  
V
3000  
2100  
4000  
2800  
V
V
RRM  
V
R(RMS)  
Average Forward Current (T =50°C)  
A
Peak Forward Surge Current (t=8.3ms)  
I
200  
mA  
A
O
I
30  
FSM  
T , T  
Operating and Storage Junction Temperature  
-65 to +150  
°C  
J
stg  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
TYP  
MAX  
UNITS  
I
I
V =Rated V  
5.0  
μA  
μA  
V
R
R
R
RRM  
RRM  
V =Rated V  
, T =100°C  
50  
3.0  
4.0  
5.0  
R
A
V
V
V
I =200mA (CR250-2)  
R
F
F
F
I =200mA (CR250-3)  
V
R
I =200mA (CR250-4)  
V
R
C
V =4.0V, f=1.0MHz  
30  
pF  
J
R
R2 (30-September 2009)  

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