Datasheet > CR05AS-8-ET24

CR05AS-8-ET24

更新时间： 2024-02-16 10:39:50

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瑞萨 - RENESAS		/
页数	文件大小	规格书
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描述
Thyristor Low Power Use

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技术参数
数据手册

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CR05AS-8-ET24 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.75
最大直流栅极触发电流：	0.1 mA	最大直流栅极触发电压：	0.8 V
最大维持电流：	3 mA	最大漏电流：	0.1 mA
通态非重复峰值电流：	10 A	最大通态电压：	1.9 V
最大通态电流：	500 A	最高工作温度：	125 °C
最低工作温度：	-40 °C	断态重复峰值电压：	400 V
子类别：	Silicon Controlled Rectifiers	表面贴装：	YES
触发设备类型：	SCR	Base Number Matches：	1

CR05AS-8-ET24 数据手册

CR05AS-8

Parameter

Symbol

I_{T (RMS)}

I_{T (AV)}

Ratings

0.79

Unit

Conditions

RMS on-state current

Average on-state current

0.5

Commercial frequency, sine half wave

180° conduction, Ta = 57°C^Note2

Surge on-state current

I²t for fusing

I_TSM

I²t

60Hz sine half wave 1 full cycle,

peak value, non-repetitive

0.4

A²s

Value corresponding to 1 cycle of half

wave 60Hz, surge on-state current

Peak gate power dissipation

Average gate power dissipation

Peak gate forward voltage

Peak gate reverse voltage

Peak gate forward current

Junction temperature

Storage temperature

P_GM

P_{G (AV)}

V_FGM

V_RGM

I_FGM

0.1

0.01

0.1

– 40 to +125

°C

Tstg

—

Mass

Typical value

Notes: 1. With gate to cathode resistance R_GK= 1 kΩ.

Electrical Characteristics

Rated value

Parameter

Symbol

Unit

Test conditions

Min.

—

Typ.

—

Max.

0.1

Repetitive peak reverse current

Repetitive peak off-state current

I_RRM

I_DRM

Tj = 125°C, V_RRMapplied

—

0.1

Tj = 125°C, V_DRMapplied,

R_GK= 1 kΩ

On-state voltage

V_TM

V_GT

V_GD

I_GT

—

1.9

0.8

Ta = 25°C, I_TM= 1.5 A,

instantaneous value

Gate trigger voltage

Gate non-trigger voltage

Gate trigger current

Holding current

Tj = 25°C, V_D= 6 V,

I_T= 0.1 A^Note4

0.2

—

Tj = 125°C, V_D= 1/2 V_DRM,

R_GK= 1 kΩ

100^Note3

µA

Tj = 25°C, V_D= 6 V,

I_T= 0.1 A^Note4

I_H

Tj = 25°C, V_D= 12 V,

R_GK= 1 kΩ

Thermal resistance

R_{th (j-a)}

—

°C/W Junction to ambient^Note2

Notes: 2. Soldering with ceramic plate (25 mm × 25 mm × t0.7 mm).

3. If special values of I_GTare required, choose item E from those listed in the table below if possible.

Item

I_GT(µA)

20 to 50

20 to 100

The above values do not include the current flowing through the 1 kΩ resistance between the gate and

cathode.

4. I_GT, V_GTmeasurement circuit.

60Ω

TUT

1kΩ

Switch

Switch 1 : I

measurement

(Inner resistance of voltage meter is about 1kΩ)

Switch 2 : V

REJ03G0348-0300 Rev.3.00 Mar 22, 2007

Page 2 of 8

123 4 5 6 7...9

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