Datasheet > CR0402-J-000GLFCT-ND

CR0402-J-000GLFCT-ND

更新时间： 2024-10-15 01:16:59

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
18页	418K
描述
Enhancement Mode pHEMT Technology (E--pHEMT)

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Document Number: MML25231HT1

Rev. 0, 4/2016

Freescale Semiconductor

Technical Data

Enhancement Mode pHEMT

Technology (E--pHEMT)

MML25231HT1

Low Noise Amplifier

The MML25231H is a single--stage low noise amplifier (LNA) with active

bias and high isolation for use in cellular infrastructure applications. It is

designed for a range of low noise, high linearity applications such as picocell,

femtocell, tower mounted amplifiers (TMA) and receiver front--end circuits. It

operates from a single voltage supply and is suitable for applications with

frequencies from 1000 to 4000 MHz such as CDMA, W--CDMA and LTE.

1000–4000 MHz, 15.2 dB

23 dBm, 0.36 NF

E--pHEMT LNA

Features



Ultra Low Noise Figure: 0.39 dB @ 1900 MHz, 0.54 dB @ 2500 MHz

High Linearity: 34.7 dBm OIP3 @ 1900 MHz, 35.2 dBm @ 2500 MHz

Frequency: 1000–4000 MHz

Unconditionally Stable Over Temperature

P1dB: 22.6 dBm @ 1900 MHz, 22.5 dBm @ 2500 MHz

Small--Signal Gain: 17.2 dB @ 1900 MHz, 15.2 dB @ 2500 MHz

Single 5 V Supply

DFN 2  2

Power--down Pin

Supply Current: 60 mA (adjustable externally)

50 Ohm Operation (some external matching required)

Cost--effective 8--pin, 2 mm DFN Surface Mount Plastic Package

Table 1. Typical Performance ⁽¹⁾

Table 2. Maximum Ratings

1750 1920 2350 2600 3600

Characteristic Symbol MHz MHz MHz MHz MHz Unit

Rating

Supply Voltage

Symbol

Value

Unit

150

Noise Figure

0.38 0.39 0.50 0.57 0.98 dB

–12.0 –12.8 –15.1 –15.9 –10.7 dB

Supply Current

dBm

C

Input Return

Loss (S11)

IRL

RF Input Power

Storage Temperature Range

Junction Temperature

stg

–65 to +150

175

Output Return

Loss (S22)

ORL –14.4 –14.4 –14.8 –15.3 –20.7 dB

C

Small-Signal

Gain (S21)

17.8 17.2 15.6 14.8 11.7 dB

Power Output

@ 1dB

P1dB 22.9 22.6 22.6 22.5 22.8 dBm

Compression

Third Order

Input Intercept

Point

IIP3

16.5 17.5 19.3 20.7 25.1 dBm

34.4 34.7 35.0 35.7 37.0 dBm

Third Order

Output

OIP3

Intercept Point

1. V = 5 Vdc, T = 25C, 50 ohm system, application circuit

tuned for specified frequency.

Table 3. Thermal Characteristics

(3)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case



134

C/W

Case Temperature 87C, 5 Vdc, 65 mA, no RF applied

1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.

MML25231HT1

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...18

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与CR0402-J-000GLFCT-ND相关器件

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