Datasheet > CR03AM-12BC

CR03AM-12BC

更新时间： 2024-10-30 05:45:59

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
5页	67K
描述
Silicon Controlled Rectifier, 1 Element, TO-92, TO-92, 3 PIN

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CR03AM-12BC 数据手册

MITSUBISHI SEMICONDUCTOR THYRISTOR

CR03AM

LOW POWER USE

NON-INSULATED TYPE, GLASS PASSIVATION TYPE

Dimensions

CR03AM

OUTLINE DRAWING

in mm

φ5.0 MAX

4.4

VOLTAGE

CLASS

TYPE

NAME

TERMINAL

GATE TERMINAL

CIRCUMSCRIBE

CIRCLE

1.25 1.25

φ0.7

• IT (AV) ........................................................................0.3A

• VDRM ..............................................................400V/600V

• IGT .........................................................................100µA

JEDEC : TO-92

APPLICATION

Leakage protector, timer, gas ignitor

MAXIMUM RATINGS

Voltage class

Symbol

Parameter

Unit

VRRM

Repetitive peak reverse voltage

Non-repetitive peak reverse voltage

DC reverse voltage

400

500

320

400

500

320

600

800

480

600

800

480

VRSM

VR (DC)

VDRM

✽1

Repetitive peak off-state voltage

Non-repetitive peak off-state voltage

DC off-state voltage

VDSM

VD (DC)

Symbol

Parameter

RMS on-state current

Average on-state current

Surge on-state current

Conditions

Ratings

0.47

0.3

Unit

IT (RMS)

IT (AV)

ITSM

Commercial frequency, sine half wave, 180° conduction, Ta=47°C

60Hz sine half wave 1 full cycle, peak value, non-repetitive

Value corresponding to 1 cycle of half wave 60Hz, surge on-state

current

I t

I t for fusing

1.6

A s

PGM

PG (AV)

VFGM

VRGM

IFGM

Peak gate power dissipation

Average gate power dissipation

Peak gate forward voltage

Peak gate reverse voltage

Peak gate forward current

Junction temperature

0.5

0.1

0.3

–40 ~ +110

–40 ~ +125

0.23

°C

Tstg

Storage temperature

—

Weight

Typical value

✽1. With gate to cathode resistance RGK=1kΩ.

Feb.1999

12 3 4 5

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