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CQD-4MLEADFREE PDF预览

CQD-4MLEADFREE

更新时间: 2024-09-29 19:58:43
品牌 Logo 应用领域
CENTRAL 三端双向交流开关
页数 文件大小 规格书
2页 490K
描述
4 Quadrant Logic Level TRIAC, 600V V(DRM), 4A I(T)RMS, PLASTIC, DPAK-3

CQD-4MLEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-252
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:compliantHTS代码:8541.30.00.80
风险等级:5.73外壳连接:MAIN TERMINAL 2
配置:SINGLEJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大均方根通态电流:4 A
断态重复峰值电压:600 V表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:10
触发设备类型:4 QUADRANT LOGIC LEVEL TRIACBase Number Matches:1

CQD-4MLEADFREE 数据手册

 浏览型号CQD-4MLEADFREE的Datasheet PDF文件第2页 
CQD-4M  
CQD-4N  
www.centralsemi.com  
SURFACE MOUNT SILICON  
TRIACS  
4.0 AMP, 600 THRU 800 VOLT  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CQD-4M and  
CQD-4N are epoxy molded silicon TRIACs designed  
for full wave AC control applications featuring gate  
triggering in all four quadrants.  
MARKING: FULL PART NUMBER  
DPAK CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
C
SYMBOL  
CQD-4M  
CQD-4N  
UNITS  
Peak Repetitive Off-State Voltage  
V
600  
800  
V
DRM  
RMS On-State Current (T =80°C)  
C
I
4.0  
40  
A
A
A2s  
W
W
A
T(RMS)  
Peak One Cycle Surge, t=10ms  
I2t Value for Fusing, t=10ms  
Peak Gate Power, tp=10μs  
Average Gate Power Dissipation  
Peak Gate Current, tp=10μs  
Operating Junction Temperature  
Storage Temperature  
I
TSM  
I2t  
2.4  
3.0  
0.2  
1.2  
P
GM  
P
G(AV)  
I
GM  
T
-40 to +125  
-40 to +150  
°C  
°C  
J
T
stg  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
I
I
I
I
I
Rated V  
R =1KΩ  
DRM GK  
,
10  
200  
5.0  
μA  
DRM  
DRM  
GT  
Rated V  
, R =1KΩ, T =125°C  
μA  
mA  
mA  
mA  
V
DRM GK  
C
V =12V, QUAD I, II, III  
2.5  
5.4  
D
V =12V, QUAD IV  
9.0  
GT  
D
R
=1KΩ  
1.6  
5.0  
H
GK  
V =12V, QUAD I, II, III, IV  
V
0.95  
1.25  
1.75  
1.75  
GT  
TM  
D
V
I
=6.0A, tp=380μs  
2
V
TM  
dv/dt  
V = / V  
T =125°C  
11  
V/μs  
3
D
DRM  
C
,
R2 (21-January 2013)  

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