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CQ220-8MFP PDF预览

CQ220-8MFP

更新时间: 2024-11-04 19:59:47
品牌 Logo 应用领域
CENTRAL 局域网三端双向交流开关
页数 文件大小 规格书
2页 75K
描述
4 Quadrant Logic Level TRIAC, 600V V(DRM), 8A I(T)RMS, TO-220AB, TO-220FP

CQ220-8MFP 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:not_compliantHTS代码:8541.30.00.80
风险等级:5.92Base Number Matches:1

CQ220-8MFP 数据手册

 浏览型号CQ220-8MFP的Datasheet PDF文件第2页 
TM  
Central  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CQ220-8MFP  
series type is an Epoxy Molded Silicon Triac designed  
for full wave AC control applications featuring gate  
triggering in all four (4) quadrants.  
CQ220-8MFP  
CQ220-8NFP  
Semiconductor Corp.  
8.0 AMP TRIAC  
600 THRU 800 VOLTS  
FULL PAK:  
• Fully insulated plastic case.  
• Suitable for automatic insertion.  
• No mica insulator required.  
• Does not require non-conductive nylon hardware.  
• Can be easily mounted with metal screw or rivet.  
TO-220FP CASE  
MARKING CODE: FULL PART NUMBER  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
C
SYMBOL  
CQ220 CQ220  
-8MFP  
-8NFP  
UNITS  
Peak Repetitive Off-State Voltage  
V
I
I
600  
800  
V
A
A
A2s  
W
W
A
DRM  
T(RMS)  
TSM  
RMS On-State Current (T =90°C)  
8.0  
50  
10  
C
Peak One Cycle Surge (t=8.3ms)  
I2t Value for Fusing (t=8.3ms)  
Peak Gate Power (tp=10µs)  
Average Gate Power Dissipation  
Peak Gate Current (tp=10µs)  
Peak Gate Voltage (tp=10µs)  
Critical Rate of Rise of On-State Current  
Repetitive (f=60Hz)  
I2t  
P
P
I
40  
GM  
G (AV)  
GM  
1.0  
4.0  
16  
V
V
GM  
di/dt  
10  
A/µs  
°C  
°C  
°C/W  
°C/W  
Storage Temperature  
Junction Temperature  
Thermal Resistance  
Thermal Resistance  
T
T
Θ
Θ
-40 to +150  
-40 to +125  
60  
stg  
J
JA  
JC  
3.2  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
10  
500  
20  
50  
25  
1.50  
2.50  
1.75  
UNITS  
µA  
µA  
mA  
mA  
mA  
V
V
V
V/µs  
I
I
I
I
I
Rated V  
Rated V  
DRM  
DRM  
GT  
GT  
H
DRM  
DRM  
, T =125°C  
V =12V, R =10Ω, QUAD I, II, III  
V =12V, R =10Ω, QUAD IV  
C
4.5  
17  
4.7  
0.95  
1.35  
1.30  
D
L
D
T
L
I =100mA  
V
V
V
V =12V, R =10Ω, QUAD I, II, III  
V =12V, R =10Ω, QUAD IV  
GT  
GT  
TM  
D
L
D
TM  
L
I
=11A, tp=380µs  
2
dv/dt  
V = / V  
, R =∞, T =125°C  
5.0  
3
D
DRM GK  
C
R1 (14-September 2004)  

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