Datasheet > CPM2-1200-0080B

CPM2-1200-0080B

更新时间： 2024-01-29 18:17:36

品牌	Logo	应用领域
科锐 - CREE		开关
页数	文件大小	规格书
6页	661K
描述
High Speed Switching with Low Capacitances

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中文翻译

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数据手册

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CPM2-1200-0080B 数据手册

V_DS

I_D

1200 V

31.6 A

80 mΩ

25˚C

CPM2-1200-0080B

R_DS(on)

Silicon Carbide Power MOSFET

Z-FET^TMMOSFET

N-Channel Enhancement Mode

Features

Package

•ꢀ High Speed Switching with Low Capacitances

•ꢀ High Blocking Voltage with Low R_DS(on)

•ꢀ Easy to Parallel and Simple to Drive

•ꢀ Avalanche Ruggedness

•ꢀ Resistant to Latch-Up

•ꢀ Halogen Free, RoHS Compliant

Beneﬁts

•ꢀ HigherꢀSystemꢀEfﬁciency

•ꢀ Reduced Cooling Requirements

•ꢀ Increased System Switching Frequency

Applications

•ꢀ Solar Inverters

•ꢀ High Voltage DC/DC Converters

•ꢀ Motor Drives

Part Number

CPM2-1200-0080B

Package

•ꢀ Switch Mode Power Supplies

•ꢀ UPS

Die

Maximum Ratings (T_Cꢀ=ꢀ25ꢀ˚Cꢀunlessꢀotherwiseꢀspeciﬁed)

Symbol

I_{DS (DC)}

Parameter

Value

Unit

Test Conditions

V_GS@20 V, T_C=ꢀ25˚C

Note

31.6

Continuous Drain Current

Note 1

V_GS@20 V, T_C=ꢀ100˚C

Pulse width t_Plimited by T_jmax

Pulsed Drain Current

Gate Source Voltage

I_{DS (pulse)}

T_C=ꢀ25˚C

-10/+25

V_GS

T_J, T_stg

T_L

-55 to

+150

Operating Junction and Storage Temperature

Solder Temperature

˚C

260

Note 1: Assumes a R_θJC< 0.60 K/W

CPM2-1200-0080B Rev. -

12 3 4 5 6

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