Datasheet > CPM2-1200-0160B

CPM2-1200-0160B

更新时间： 2024-09-24 01:24:19

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科锐 - CREE		/
页数	文件大小	规格书
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描述
Silicon Carbide Power MOSFET C2M MOSFET Technology

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数据手册

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CPM2-1200-0160B 数据手册

V_DS

I_D

R_DS(on)

1200 V

19 A

25˚C

CPM2-1200-0160B

160 mΩ

Silicon Carbide Power MOSFET

C2M^TMMOSFET Technology

N-Channel Enhancement Mode

Features

Chip Outline

•ꢀ New C2M SiC MOSFET technlogy

•ꢀ High Blocking Voltage with Low On-Resistance

•ꢀ High Speed Switching with Low Capacitances

•ꢀ Easy to Parallel and Simple to Drive

•ꢀ Avalanche Ruggedness

•ꢀ Resistant to Latch-Up

•ꢀ Halogen Free, RoHS Compliant

Beneﬁts

•ꢀ HigherꢀSystemꢀEfﬁciency

•ꢀ Reduced Cooling Requirements

•ꢀ Increased Power Density

•ꢀ Increased System Switching Frequency

Applications

•ꢀ Solar Inverters

•ꢀ Switch Mode Power Supplies

•ꢀ High Voltage DC/DC Converters

•ꢀ LED Lighting Power Supplies

Part Number

Die Size (mm)

2.39 × 2.63

CPM2-1200-0160B

Maximum Ratings (T_Cꢀ=ꢀ25ꢀ˚Cꢀunlessꢀotherwiseꢀspeciﬁed)

Symbol

Parameter

Drain - Source Voltage

Value

Unit

Test Conditions

Note

V_GS= 0 V, I_Dꢀ=ꢀ100ꢀμA

1200

-10/+25

-5/+20

V_DSmax

V_GSmax

V_GSop

Gate - Source Voltage

Absolute maximum values

Recommended operational values

V_GS= 20 V, T_C=ꢀ25˚C

V_GS= 20 V, T_C=ꢀ100˚C

Continuous Drain Current

I_D

12.5

Pulsed Drain Current

I_D(pulse)

Pulse width t_Plimited by T_jmax

-55 to

+150

OperatingꢀJunctionꢀandꢀStorageꢀTemperature

˚C

T_J, T_stg

Solder Temperature

260

325

˚C

1.6mm (0.063”) from case for 10s

10 min. maximum

T_L

Maximum Processing Temperature

T_Proc

Note (1): Assumes a R_θJC< 0.90 K/W

CPM2-1200-0160B Rev. A

12 3 4 5 6 7

中文翻译

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