Datasheet > CP802-CWDM3011P

CP802-CWDM3011P

更新时间： 2024-11-19 14:54:59

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CENTRAL		/
页数	文件大小	规格书
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描述
11A,30V Bare die,85.830 X 59.450 mils,MOSFET

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CP802-CWDM3011P 数据手册

CP802-CWDM3011P

P-Channel MOSFET Die

Enhancement-Mode

www.centralsemi.com

The CP802-CWDM3011P medium power P-Channel MOSFET is designed for power management

and load switching applications. The 5.5 mil thick die provides an ultra low proﬁle device that is

readily attached using standard die attach wire bond processes.

APPLICATIONS:

• Load switching

• Power management

• DC-DC conversion

FEATURES:

• Low on-resistance, r

DS(ON)

• Low gate charge, Q

• High drain current density

MECHANICAL SPECIFICATIONS:

Die Size

83.5 x 57.1 MILS

Die Thickness

Gate Bonding Pad Area

5.5 MILS

5.5 x 5.5 MILS

Source 1 Bonding Pad Area 39.1 x 54.1 MILS

Source 2 Bonding Pad Area 39.1 x 54.1 MILS

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

Al-Cu - 40,000Å

Ti/Ni/Ag - 1,000Å/3,000Å/10,000Å

2.36 MILS

8 INCHES

Gross Die Per Wafer

8,360

MAXIMUM RATINGS: (T =25°C)

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Steady State)

Maximum Pulsed Drain Current, tp=10μs

Operating and Storage Junction Temperature

SYMBOL

UNITS

°C

T , T

-55 to +150

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

, I

=20V, V =0

100

1.0

μA

mΩ

GSSF GSSR

DSS

=30V, V =0

=0, I =250μA

1.0

DSS

GS(th)

DS(ON)

=V , I =250μA

1.4

3.0

1.3

GS DS

=0, I =2.6A

=10V, I =1.0A

6.6

8.2

450

3100

320

7.0

10.1

=4.5V, I =1.0A

=8.0V, V =0, f=1.0MHz

rss

iss

oss

=8.0V, V =0, f=1.0MHz

=15V, V =10V, I =11A

GS D

g(tot)

=15V, V =10V, I =11A

=15V, V =10V, I =1.0A

off

R =6.0Ω, R =15Ω

330

R0 (14-April 2020)

12 3 4

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