Datasheet > CP805-CXDM4060P

CP805-CXDM4060P

更新时间： 2024-11-19 14:55:43

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6A,40V Bare die,63.800 X 38.900 mils,MOSFET

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CP805-CXDM4060P 数据手册

CP805-CXDM4060P

P-Channel MOSFET Die

Enhancement-Mode

www.centralsemi.com

The CP805-CXDM4060P medium power P-Channel MOSFET is optimized for power management

and drive circuit applications where energy eﬃciency is a critical design element.

MECHANICAL SPECIFICATIONS:

Die Size

63.8 x 38.9 MILS

5.5 MILS

Die Thickness

Gate Bonding Pad Area

Source Bonding Pad Area

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

7.1 x 7.1 MILS

60.4 x 35.6 MILS

Al-Cu – 40,000Å

Ti/Ni/Ag – 1,000Å/3,000Å/10,000Å

1.97 MILS

SOURCE

8 INCHES

Gross Die Per Wafer

17,312

MAXIMUM RATINGS: (T =25°C)

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Steady State)

Maximum Pulsed Drain Current, tp=10μs

Operating and Storage Junction Temperature

SYMBOL

UNITS

°C

6.4

24.4

-55 to +150

T , T

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

=20V, V =0

100

1.0

μA

mΩ

GSS

DSS

GS(th)

DS(ON)

iss

oss

rss

g(tot)

=40V, V =0

=0, I =250μA

1.0

=V , I =250μA

3.0

1.5

GS DS

=0, I =1.0A

=10V, I =1.0A

=4.5V, I =1.0A

=25V, V =0, f=1.0MHz

1273

100.5

83.1

2.7

6.3

13.1

5.2

55.7

10.7

=32V, V =4.5V, I =6.0A

=20V, V =10V, I =1.0A

off

R =3.3Ω, R =20Ω

R1 (17-February 2021)

12 3

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