CNY75(G) Series
Vishay Semiconductors
Maximum Safety Ratings (according to VDE 0884) see figure 1
This device is used for protective separation against electrical shock only within the maximum safety ratings.
This must be ensured by using protective circuits in the applications.
Input (Emitter)
Parameters
Forward current
Test Conditions
Symbol
Value
130
Unit
mA
I
si
Output (Detector)
Parameters
Power dissipation
Test Conditions
≤ 25 C
Symbol
Value
265
Unit
mW
T
amb
P
si
Coupler
Parameters
Rated impulse voltage
Safety temperature
Test Conditions
Symbol
Value
6
150
Unit
kV
C
V
IOTM
T
si
Insulation Rated Parameters (according to VDE 0884)
Parameter
Partial discharge test voltage – 100%, t
Routine test
Test Conditions
= 1 s
Symbol
V
pd
Min.
1.6
Typ.
Max.
Unit
kV
test
Partial discharge test voltage – t = 60 s, t
= 10 s,
V
IOTM
6
1.3
kV
kV
Tr
test
Lot test (sample test)
(see figure 2)
V
pd
12
Insulation resistance
V
V
T
amb
= 500 V
= 500 V,
≤ 100 C
R
R
10
IO
IO
11
10
IO
IO
9
V
IO
= 500 V,
R
IO
10
T
≤ 150 C
amb
(construction test only)
V
IOTM
275
250
V
t , t = 1 to 10 s
1 2
t , t = 1 s
3 4
P
si
(mW)
225
t
= 10 s
= 12 s
test
200
175
150
125
100
t
stres
V
Pd
V
V
IOWM
IORM
75
50
25
0
I
(mA)
si
0
t
t
t
3 test 4
0
25
50
75 100 125 150 175
t
= 60 s
t
t
t
Tr
1
2
stres
95 10923
T
amb
– Ambient Temperature ( °C )
13930
t
Figure 1. Derating diagram
Figure 2. Test pulse diagram for sample test according to
DIN VDE 0884
4 (12)
Rev. A4, 11–Jan–99