CNY75(G) Series
Vishay Semiconductors
Features
Approvals:
Rated recurring peak voltage (repetitive)
= 600 V
V
IORM
RMS
BSI: BS EN 41003, BS EN 60095 (BS 415),
BS EN 60950 (BS 7002),
Certificate number 7081 and 7402
Creepage current resistance according to
VDE 0303/IEC 112
Comparative Tracking Index: CTI = 275
FIMKO (SETI): EN 60950,
Certificate number 12399
Thickness through insulation ≥ 0.75 mm
Underwriters Laboratory (UL) 1577 recognized,
General features:
file number E-76222
Isolation materials according to UL94-VO
VDE 0884, Certificate number 94778
Pollution degree 2
(DIN/VDE 0110 part 1 resp. IEC 664)
VDE 0884 related features:
Climatic classification 55/100/21 (IEC 68 part 1)
Special construction:
Rated impulse voltage (transient overvoltage)
Therefore, extra low coupling capacity of
typical 0.3 pF, high Common Mode Rejection
V
= 6 kV peak
IOTM
Isolation test voltage
(partial discharge test voltage) V = 1.6 kV
Low temperature coefficient of CTR
CTR offered in 3 groups
Coupling System A
pd
Rated isolation voltage (RMS includes DC)
V
IOWM
= 600 V
(848 V peak)
RMS
Absolute Maximum Ratings
Input (Emitter)
Parameter
Reverse voltage
Forward current
Forward surge current
Power dissipation
Test Conditions
Symbol
Value
5
60
3
100
125
Unit
V
mA
A
mW
C
V
R
I
F
t ≤ 10 s
I
p
FSM
T
amb
≤ 25 C
P
V
Junction temperature
T
j
Output (Detector)
Parameter
Collector base voltage
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
Test Conditions
Symbol
Value
90
90
7
50
100
150
125
Unit
V
V
V
CBO
V
CEO
V
ECO
V
I
C
mA
mA
mW
C
t /T = 0.5, t ≤ 10 ms
I
p
p
CM
T
amb
≤ 25 C
P
V
T
j
Coupler
Parameter
Test Conditions
Symbol
Value
3.75
250
Unit
kV
mW
C
C
C
AC isolation test voltage (RMS) t = 1 min
V
IO
P
tot
Total power dissipation
Ambient temperature range
Storage temperature range
Soldering temperature
T
amb
≤ 25 C
T
–55 to +100
–55 to +125
260
amb
T
stg
2 mm from case, t ≤ 10 s
T
sd
2 (12)
Rev. A4, 11–Jan–99