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CNZ1109 PDF预览

CNZ1109

更新时间: 2024-01-12 19:48:27
品牌 Logo 应用领域
松下 - PANASONIC 输出元件光电
页数 文件大小 规格书
3页 86K
描述
Transistor Output Slotted Switch, 1-Channel, 5mm Slot Width, PISTR104-008, 4 PIN

CNZ1109 技术参数

生命周期:Obsolete包装说明:PISTR104-008, 4 PIN
Reach Compliance Code:unknown风险等级:5.84
Coll-Emtr Bkdn Voltage-Min:30 V配置:SINGLE
最大暗电源:200 nA最大正向电流:0.05 A
间隙大小:5 mm安装特点:THROUGH HOLE MOUNT
功能数量:1最大通态电压:30 V
标称通态集电极电流:0.3 mA最高工作温度:85 °C
最低工作温度:-25 °C光电设备类型:TRANSISTOR OUTPUT SLOTTED SWITCH
输出电路类型:Transistor标称槽宽:5 mm
表面贴装:NOBase Number Matches:1

CNZ1109 数据手册

 浏览型号CNZ1109的Datasheet PDF文件第2页浏览型号CNZ1109的Datasheet PDF文件第3页 
Transmissive Photosensors (Photo lnterrupters)  
CNZ1109 (ON1109)  
Photo Interrupter  
Mark for Indicating  
LED side  
Unit: mm  
2-C2 0.ꢀ  
For contactless SW, object detection  
28.0 0.ꢀ3  
17.0 0.ꢀ  
3.0 0.2  
Overview  
1.0 0.2  
CNZ1109 is a photocoupler in which a high efficiency GaAs  
infrared light emitting diode is used as the light emitting element,  
and a high sensitivity phototransistor is used as the light detecting  
element. The two elements are arranged so as to face each other,  
and objects passing between them are detected.  
A
A'  
0.43 0.2  
12.0  
A-A' Cross section  
Features  
Highly precise position detection: 0.7 mm  
Fast response tr , tf = 6 µs (typ.)  
Small output current variation against change in temperature  
Deep and wide gap between emitting and detecting elements  
(2)  
(1)  
(ꢀ)  
(4)  
φꢀ.2 0.2  
1: Anode  
2: Cathode  
3: Collector  
4: Emitter  
22.4 0.2  
Absolute Maximum Ratings Ta = 25°C  
PISTR104-008 Package  
Parameter  
Symbol Rating  
Unit  
V
Internal Connection  
Reverse voltage  
VR  
IF  
3
Input (Light  
emitting diode) Forward current  
Power dissipation *  
50  
75  
30  
mA  
mW  
V
2
3
4
1
PD  
Output (Photo Collector-emitter voltage VCEO  
1
transistor)  
(Base open)  
Emitter-collector voltage VECO  
(Base open)  
5
V
Collector current  
Collector power dissipation *  
IC  
20  
100  
mA  
mW  
°C  
Note) 1: Input power derating ratio is 1.0 mW/°C at  
*
2
PC  
Ta 25°C.  
Temperature Operating ambient temperature Topr  
Storage temperature  
25 to +85  
2: Output power derating ratio is 1.34 mW/°C  
at Ta 25°C.  
*
Tstg 30 to +100  
°C  
Electrical-Optical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
VF  
Conditions  
Min  
Typ  
Max  
1.5  
Unit  
V
Input  
Forward voltage  
IF = 50 mA  
VR = 3 V  
1.2  
characteristics Reverse current  
IR  
10  
µA  
nA  
Output  
Collector-emitter cutoff current  
ICEO  
VCE = 10 V  
200  
characteristics (Base open)  
Collector-emitter capacitance  
Collector current  
CC  
IC  
VCE = 10 V, f = 1 MHz  
IF = 50 mA, IC = 0.1 mA  
5
pF  
mA  
V
Transfer  
0.3  
characteristics  
Collector-emitter saturation voltage VCE(sat) IF = 50 mA, IC = 1 mA  
0.3  
Rise time *  
tr  
tf  
VCC = 10 V, IC = 1 mA, RL = 100 Ω  
6.0  
6.0  
µs  
Fall time *  
µs  
Note) 1. Input and output are practiced  
by electricity.  
3. : Switching time measurement circuit  
*
Sig. in  
VCC  
td: Delay time  
tr: Rise time  
tf: Fall time  
(Input pulse)  
2. This device is designed be dis-  
regarded radiation.  
90%  
10%  
(Output pulse)  
Sig. out  
td  
RL  
tr  
tf  
50  
Note) The part number in the parenthesis shows conventional part number.  
Publication date: April 2004  
SHG00029BED  
1

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