Transmissive Photosensors (Photo lnterrupters)
CNZ1109 (ON1109)
Photo Interrupter
Mark for Indicating
LED side
Unit: mm
2-C2 0.ꢀ
For contactless SW, object detection
28.0 0.ꢀ3
17.0 0.ꢀ
3.0 0.2
■ Overview
1.0 0.2
CNZ1109 is a photocoupler in which a high efficiency GaAs
infrared light emitting diode is used as the light emitting element,
and a high sensitivity phototransistor is used as the light detecting
element. The two elements are arranged so as to face each other,
and objects passing between them are detected.
A
A'
0.43 0.2
12.0
A-A' Cross section
■ Features
• Highly precise position detection: 0.7 mm
• Fast response tr , tf = 6 µs (typ.)
• Small output current variation against change in temperature
• Deep and wide gap between emitting and detecting elements
(2)
(1)
(ꢀ)
(4)
φꢀ.2 0.2
1: Anode
2: Cathode
3: Collector
4: Emitter
22.4 0.2
■ Absolute Maximum Ratings Ta = 25°C
PISTR104-008 Package
Parameter
Symbol Rating
Unit
V
Internal Connection
Reverse voltage
VR
IF
3
Input (Light
emitting diode) Forward current
Power dissipation *
50
75
30
mA
mW
V
2
3
4
1
PD
Output (Photo Collector-emitter voltage VCEO
1
transistor)
(Base open)
Emitter-collector voltage VECO
(Base open)
5
V
Collector current
Collector power dissipation *
IC
20
100
mA
mW
°C
Note) 1: Input power derating ratio is 1.0 mW/°C at
*
2
PC
Ta ≥ 25°C.
Temperature Operating ambient temperature Topr
Storage temperature
−25 to +85
2: Output power derating ratio is 1.34 mW/°C
at Ta ≥ 25°C.
*
Tstg −30 to +100
°C
■ Electrical-Optical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VF
Conditions
Min
Typ
Max
1.5
Unit
V
Input
Forward voltage
IF = 50 mA
VR = 3 V
1.2
characteristics Reverse current
IR
10
µA
nA
Output
Collector-emitter cutoff current
ICEO
VCE = 10 V
200
characteristics (Base open)
Collector-emitter capacitance
Collector current
CC
IC
VCE = 10 V, f = 1 MHz
IF = 50 mA, IC = 0.1 mA
5
pF
mA
V
Transfer
0.3
characteristics
Collector-emitter saturation voltage VCE(sat) IF = 50 mA, IC = 1 mA
0.3
Rise time *
tr
tf
VCC = 10 V, IC = 1 mA, RL = 100 Ω
6.0
6.0
µs
Fall time *
µs
Note) 1. Input and output are practiced
by electricity.
3. : Switching time measurement circuit
*
Sig. in
VCC
td: Delay time
tr: Rise time
tf: Fall time
(Input pulse)
2. This device is designed be dis-
regarded radiation.
90%
10%
(Output pulse)
Sig. out
td
RL
tr
tf
50 Ω
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SHG00029BED
1