CNY75(G) Series
Vishay Semiconductors
Electrical Characteristics (Tamb = 25°C)
Input (Emitter)
Parameter
Forward voltage
Test Conditions
I = 50 mA
Symbol
Min.
Typ.
1.25
Max.
1.6
Unit
V
V
F
F
Reverse current
V = 6 V
R
I
R
10
A
Junction capacitance
V = 0, f = 1 MHz
R
C
j
50
pF
Output (Detector)
Parameter
Collector base voltage
Collector emitter voltage I = 1 mA
Emitter collector voltage
Collector emitter cut-off
current
Test Conditions
I = 100 A
Symbol
Min.
90
90
7
Typ.
Max.
150
Unit
V
V
V
nA
V
V
V
C
CBO
CEO
ECO
CEO
C
I = 100 A
E
V
CE
= 20 V, I = 0
I
F
Coupler
Parameter
Collector emitter
saturation voltage
Test Conditions
Symbol
V
CEsat
Min.
Typ.
Max.
0.3
Unit
V
I = 10 mA, I = 1 mA
F
C
Cut-off frequency
V
= 5 V, I = 10 mA,
f
c
110
0.3
kHz
pF
CE
F
R = 100
f = 1 MHz
L
Coupling capacitance
C
k
Current Transfer Ratio (CTR)
Parameter
I /I
Test Conditions
= 5 V, I = 1 mA
Type
Symbol
CTR
CTR
CTR
CTR
CTR
CTR
Min.
0.15
0.3
0.6
0.63
1
Typ.
Max.
Unit
V
CNY75(G)A
CNY75(G)B
CNY75(G)C
CNY75(G)A
CNY75(G)B
CNY75(G)C
C F
CE
F
V
CE
= 5 V, I = 10 mA
1.25
2
3.2
F
1.6
Rev. A4, 11–Jan–99
3 (12)